TVV010
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TVV010 is Designed for
PACKAGE STYLE .380 4L STUD
.112x45°...
TVV010
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The ASI TVV010 is Designed for
PACKAGE STYLE .380 4L STUD
.112x45° A
B
D S
ØC
FEATURES:
Omnigold™ Metalization System
S G
H I J
D
MAXIMUM RATINGS
IC VCB VCE PDISS TJ TSTG θ JC 10 A 60 V 35 V 140 W @ TC = 25 OC -65 OC to +200 OC -65 C to +150 C 2.2 OC/W
O O
DIM A B C D E F G H I J
#8-32 UNC-2A F E
G
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94
.230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05
ORDER CODE: ASI10656
O
CHARACTERISTICS
SYMBOL
BVCEO BVCER BVEBO ICES hFE PGE IMD1 IC = 50 mA IC = 50 mA IE = 10 mA VE = 28 V
TC = 25 C
NONETEST CONDITIONS
RBE = 10 Ω
MINIMUM TYPICAL MAXIMUM
35 60 4.0 5
UNITS
V V V mA --dB dBc
VCE = 5.0 V VCE = 25 V POUT = 10 W
IC = 1.0 A IC = 1600 mA f = 225 MHz
10 10 -54
100
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
...