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TVV010

Advanced Semiconductor

NPN SILICON RF POWER TRANSISTOR

TVV010 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV010 is Designed for PACKAGE STYLE .380 4L STUD .112x45°...


Advanced Semiconductor

TVV010

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Description
TVV010 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV010 is Designed for PACKAGE STYLE .380 4L STUD .112x45° A B D S ØC FEATURES: Omnigold™ Metalization System S G H I J D MAXIMUM RATINGS IC VCB VCE PDISS TJ TSTG θ JC 10 A 60 V 35 V 140 W @ TC = 25 OC -65 OC to +200 OC -65 C to +150 C 2.2 OC/W O O DIM A B C D E F G H I J #8-32 UNC-2A F E G MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94 .230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05 ORDER CODE: ASI10656 O CHARACTERISTICS SYMBOL BVCEO BVCER BVEBO ICES hFE PGE IMD1 IC = 50 mA IC = 50 mA IE = 10 mA VE = 28 V TC = 25 C NONETEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 35 60 4.0 5 UNITS V V V mA --dB dBc VCE = 5.0 V VCE = 25 V POUT = 10 W IC = 1.0 A IC = 1600 mA f = 225 MHz 10 10 -54 100 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 ...




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