DatasheetsPDF.com

TVV030

Advanced Semiconductor

NPN SILICON RF POWER TRANSISTOR

TVV030 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV030 is Designed for PACKAGE STYLE .500 6L FLG C A 2x ØN...


Advanced Semiconductor

TVV030

File Download Download TVV030 Datasheet


Description
TVV030 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV030 is Designed for PACKAGE STYLE .500 6L FLG C A 2x ØN FULL R D FEATURES: Omnigold™ Metalization System B G .725/18,42 F E MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 16 A 60 V 30 V 4.0 V 150 W @ TC = 25 OC -65 OC to +200 OC -65 C to +150 C 1.2 OC/W O O DIM A B C D E F G H I J K L M N K H MINIMUM inches / mm M L J I MAXIMUM inches / mm .150 / 3.43 .045 / 1.14 .210 / 5.33 .835 / 21.21 .200 / 5.08 .490 / 12.45 .003 / 0.08 .125 / 3.18 .725 / 18.42 .970 / 24.64 .090 / 2.29 .150 / 3.81 .160 / 4.06 .220 / 5.59 .865 / 21.97 .210 / 5.33 .510 / 12.95 .007 / 0.18 .980 / 24.89 .105 / 2.67 .170 / 4.32 .285 / 7.24 .120 / 3.05 .135 / 3.43 ORDER CODE: ASI10660 CHARACTERISTICS SYMBOL BVCBO BVCER BVCEO BVEBO ICES hFE COB PG IMD1 TC = 25 C O NONETEST CONDITIONS IC = 100 mA IC = 100 mA IC = 100 mA IE = 10 mA VCB = 50 V VCE = 5.0 V VCB = 30 V VCE = 28 V POUT = 30 W IC = 3.5 A IC = 1.0 A f = 1.0 MHz f = 225 MHz RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 60 60 30 4.0 5.0 10 120 150 7.5 -53 UNITS V V V V mA --pF dB dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 ...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)