TVV030
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TVV030 is Designed for
PACKAGE STYLE .500 6L FLG
C A 2x ØN...
TVV030
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The ASI TVV030 is Designed for
PACKAGE STYLE .500 6L FLG
C A 2x ØN FULL R D
FEATURES:
Omnigold™ Metalization System
B G .725/18,42 F
E
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 16 A 60 V 30 V 4.0 V 150 W @ TC = 25 OC -65 OC to +200 OC -65 C to +150 C 1.2 OC/W
O O
DIM A B C D E F G H I J K L M N
K H MINIMUM
inches / mm
M L
J
I
MAXIMUM
inches / mm
.150 / 3.43 .045 / 1.14 .210 / 5.33 .835 / 21.21 .200 / 5.08 .490 / 12.45 .003 / 0.08 .125 / 3.18 .725 / 18.42 .970 / 24.64 .090 / 2.29 .150 / 3.81
.160 / 4.06
.220 / 5.59 .865 / 21.97 .210 / 5.33 .510 / 12.95 .007 / 0.18
.980 / 24.89 .105 / 2.67 .170 / 4.32 .285 / 7.24
.120 / 3.05
.135 / 3.43
ORDER CODE: ASI10660
CHARACTERISTICS
SYMBOL
BVCBO BVCER BVCEO BVEBO ICES hFE COB PG IMD1
TC = 25 C
O
NONETEST CONDITIONS
IC = 100 mA IC = 100 mA IC = 100 mA IE = 10 mA VCB = 50 V VCE = 5.0 V VCB = 30 V VCE = 28 V POUT = 30 W IC = 3.5 A IC = 1.0 A f = 1.0 MHz f = 225 MHz RBE = 10 Ω
MINIMUM TYPICAL MAXIMUM
60 60 30 4.0 5.0 10 120 150 7.5 -53
UNITS
V V V V mA --pF dB dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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