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TVV030A Dataheets PDF



Part Number TVV030A
Manufacturers Advanced Semiconductor
Logo Advanced Semiconductor
Description NPN SILICON RF POWER TRANSISTOR
Datasheet TVV030A DatasheetTVV030A Datasheet (PDF)

TVV030A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV030A is Designed for .112 x 45° A Ø .630 NOM PACKAGE STYLE .500 4L STUD(A) FEATURES: • • • Omnigold™ Metalization System B C E C E B E D G MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC O 1/4-28 UNF-2A F H 16 A 60 V 30 V 4.0 V 150 W @ TC = 25 C -65 C to +200 C -65 OC to +150 OC 1.2 OC/W O O DIM A B C D E F G H .185 / 4.70 .497 / 12.62 .545 / 13.84 .495 / 12.57 .003 / 0.08 MINIMUM inches / mm MAXIMUM inches / mm .2.

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TVV030A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV030A is Designed for .112 x 45° A Ø .630 NOM PACKAGE STYLE .500 4L STUD(A) FEATURES: • • • Omnigold™ Metalization System B C E C E B E D G MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC O 1/4-28 UNF-2A F H 16 A 60 V 30 V 4.0 V 150 W @ TC = 25 C -65 C to +200 C -65 OC to +150 OC 1.2 OC/W O O DIM A B C D E F G H .185 / 4.70 .497 / 12.62 .545 / 13.84 .495 / 12.57 .003 / 0.08 MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .230 / 5.84 1.050 / 26.67 .555 / 14.10 .505 / 12.83 .007 / 0.18 .830 / 21.08 .198 / 5.03 .530 / 13.46 ORDER CODE: ASI10661 CHARACTERISTICS SYMBOL BVCBO BVCER BVCEO BVEBO hFE COB PG IMD1 TC = 25 C O NONETEST CONDITIONS IC = 100 mA IC = 100 mA IC = 100 mA IE = 10 mA VCE = 5.0 V VCB = 30 V VCE = 28 V POUT = 30 W IC = 3.5 A IC = 1.0 A f = 1.0 MHz f = 225 MHz RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 60 60 30 4.0 10 120 150 7.5 -53 UNITS V V V V --pF dB dBC A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 .


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