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TYN1006

STMicroelectronics

SCR

® TYN606 TYN1006 SCR A FEATURES High surge capability High on-state current High stability and reliability s s s G K...


STMicroelectronics

TYN1006

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Description
® TYN606 TYN1006 SCR A FEATURES High surge capability High on-state current High stability and reliability s s s G K DESCRIPTION The TYN606 and TYN1006 Family of Silicon Controlled Rectifiers are high performance glass passivated technology. This general purpose Family of Silicon Controlled Rectifiers is designed for power supply up to 400Hz on resistive or inductive load. K A G TO-220AB ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) IT(AV) ITSM I2t dI/dt Tstg Tj Tl Parameter RMS on-state current (180° conduction angle) Average on-state current (180° conduction angle, single phase circuit) Non repetitive surge peak on-state current (Tj initial = 25°C) I2t value Critical rate of rise of on-state current Gate supply: IG = 100mA dIG/dt = 1A/µs Storage and operating junction temperature range Maximum lead soldering temperature during 10s at 4.5mm from case Tc = 110°C Tc = 110°C tp = 8.3ms tp = 10ms tp = 10ms Value 6 3.8 73 70 24.5 50 -40 to +150 -40 to +125 260 A2s A/µs °C °C Unit A A A TYN Symbol VDRM VRRM Parameter 606 Repetitive peak off-state voltage Tj = 125°C 600 1006 1000 V Unit September 2001 - Ed: 1A 1/4 TYN606 TYN1006 THERMAL RESISTANCE Symbol Rth (j-a) Rth (j-c) DC Junction to ambient Junction to case for DC Parameter Value 60 2.5 Unit °C/W °C/W GATE CHARACTERISTICS (maximum values) PG(AV) = 1W PGM = 10W (tp = 20µs) IFGM = 4A (tp = 20µs) ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD tgt IL IH VTM IDRM IRRM dV/dt tq VD = 12V (DC) VD = 12V (DC) VD = VDRM...




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