TSD2932

® SD2932 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs PRELIMINARY DATA ν ν ν ν GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL POUT = 300W MIN. WITH 15 dB GAIN @175 MHz DESCRIPTION The SD2932 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2932 is intended for use in 50V dc large signal applications up to 250 MHz M244 epoxy sealed ORDER CODE BRANDING SD2932 TSD2932 PIN CONNECTION 1. Drain 2. Gate ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC) Symbol V (BR)DSS V DGR V GS ID P DI SS Tj T STG Parameter Drain Source Voltage Drain-Gate Voltage (R GS = 1M Ω ) Gate-Source Voltage Drain Current Power Dissipation Max. O perating Junction Temperature Storage Temperature Value 125 125 ± 20 40 500 +200 -65 to 150 3. Source Uni t V V V A W o o C C THERMAL DATA R th (j-c) R th(c -s) Junction-Case Thermal Resistance Case Heatsink Thermal Resistance ∗ 0.35 0.12 o o C/W C/W ∗ Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent). March 2000 1/13 SD2932 ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC (per section) Symb ol V (BR)DSS I DSS I GSS V GS(Q) V DS(on) gfs C ISS C OSS C RSS V GS = 0 V V GS = 0 V V GS = 20 V V DS = 10 V V GS = 10V V DS = 10V V GS = 0V V GS = 0V V GS = 0V Parameter I DS = 100 mA V DS = 50 V V DS = 0 V I D = 250 mA ID = 10 A ID = 5 A V DS = 50 V V DS = 50 V V DS = 50 V f = 1 MHz f = 1 MHz f = 1 MHz 5 480 190 18 2 Min. 125 5 5 5 3 Typ...