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TSFF5200 Dataheets PDF



Part Number TSFF5200
Manufacturers Vishay Telefunken
Logo Vishay Telefunken
Description High Speed IR Emitting Diode
Datasheet TSFF5200 DatasheetTSFF5200 Datasheet (PDF)

TSFF5200 Vishay Telefunken High Speed IR Emitting Diode in ø5 mm (T–1¾) Package Description TSFF5200 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. The new technology combines the high speed of DH– GaAlAs with the efficiency of standard GaAlAs and the low forward voltage of the standard GaAs technology. 94 8390 Features D D D D D D D D D High modulation bandwidth (35 MHz) Extra high radiant power and radia.

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TSFF5200 Vishay Telefunken High Speed IR Emitting Diode in ø5 mm (T–1¾) Package Description TSFF5200 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. The new technology combines the high speed of DH– GaAlAs with the efficiency of standard GaAlAs and the low forward voltage of the standard GaAs technology. 94 8390 Features D D D D D D D D D High modulation bandwidth (35 MHz) Extra high radiant power and radiant intensity Low forward voltage Suitable for high pulse current operation Standard T–1¾ (ø 5 mm) package Angle of half intensity ϕ = ± 10° Peak wavelength lp = 870 nm High reliability Good spectral matching to Si photodetectors Applications IInfrared video data transmission between Camcorder and TV set. Free air data transmission systems with high modulation frequencies or high data transmission rate requirements. Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Forward Current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 100 300 1 250 100 –25...+85 –25...+85 260 300 Unit V mA mA A mW °C °C °C °C K/W tp/T = 0.5, tp = 100 ms tp = 100 ms t x 5sec, 2 mm from case Document Number 81060 Rev. 2, 29-Jun-99 www.vishay.de • FaxBack +1-408-970-5600 1 (6) TSFF5200 Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Forward Voltage g Temp. Coefficient of VF Reverse Current Junction Capacitance Radiant Intensity y Radiant Power Temp. Coefficient of fe Angle of Half Intensity Peak Wavelength Spectral Bandwidth Temp. Coefficient of lp Rise Time Fall Time Cut–Off Frequency Test Conditions IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 ms IF = 100mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 ms IF = 100 mA, tp = 20 ms IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IDC = 70 mA, IAC = 30 mA pp Symbol VF VF TKVF IR Cj Ie Ie TKfe ϕ Min Typ 1.45 2.5 –2.4 160 160 1600 40 –0.5 ±10 870 40 0.2 10 10 35 Max 1.6 3.0 10 80 800 Unit V V mV/K mA pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns MHz fe TKlp tr tf fc lp Dl Typical Characteristics (Tamb = 25_C unless otherwise specified) 250 PV – Power Dissipation ( mW ) 200 IF – Forward Current ( mA ) 250 200 150 RthJA 100 150 100 RthJA 50 0 50 0 0 20 40 60 80 100 0 16112 20 40 60 80 100 16111 Tamb – Ambient Temperature ( °C ) Tamb – Ambient Temperature ( °C ) Figure 1. Power Dissipation vs. Ambient Temperature Figure 2. Forward Current vs. Ambient Temperature www.vishay.de • FaxBack +1-408-970-5600 2 (6) Document Number 81060 Rev. 2, 29-Jun-99 TSFF5200 Vishay Telefunken 1000 I F – Forward Current ( A ) tp / T = 0.01 0.02 0.05 0.1 Tamb < 50° 1000.0 I e – Radiant Intensity ( mW/sr ) 100.0 10.0 0.2 0.5 100 0.01 1.0 0.


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