DatasheetsPDF.com

TSHA5203 Dataheets PDF



Part Number TSHA5203
Manufacturers Vishay Telefunken
Logo Vishay Telefunken
Description GaAlAs Infrared Emitting Diodes in 5 mm (T-13/4) Package
Datasheet TSHA5203 DatasheetTSHA5203 Datasheet (PDF)

TSHA520. Vishay Telefunken GaAlAs Infrared Emitting Diodes in ø 5 mm (T–1¾) Package Description The TSHA520. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 % radiant power improvement. 94 8390 Features D D D D D D D Extra high radiant power and radiant intensity Suitable for high pulse current operation Standard.

  TSHA5203   TSHA5203



Document
TSHA520. Vishay Telefunken GaAlAs Infrared Emitting Diodes in ø 5 mm (T–1¾) Package Description The TSHA520. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 % radiant power improvement. 94 8390 Features D D D D D D D Extra high radiant power and radiant intensity Suitable for high pulse current operation Standard T–1¾ (ø 5 mm) package Angle of half intensity ϕ = ± 12° Peak wavelength lp = 875 nm High reliability Good spectral matching to Si photodetectors Applications Infrared remote control and free air transmission systems with high power and long transmission distance requirements in combination with PIN photodiodes or phototransistors. Because of the reduced radiance absorption in glass at the wavelength of 875 nm, this emitter series is also suitable for systems with panes in the transmission range between emitter and detector. Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Forward Current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 100 200 2.5 210 100 –55...+100 –55...+100 260 350 Unit V mA mA A mW °C °C °C °C K/W tp/T = 0.5, tp = 100 ms tp = 100 ms t x 5sec, 2 mm from case Document Number 81019 Rev. 2, 20-May-99 www.vishay.de • FaxBack +1-408-970-5600 1 (6) TSHA520. Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Forward Voltage Temp. Coefficient of VF Reverse Current Junction Capacitance Temp. Coefficient of fe Angle of Half Intensity Peak Wavelength Spectral Bandwidth Temp. Coefficient of lp Rise Time Fall Time Test Conditions IF = 100 mA, tp = 20 ms IF = 100mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 20 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 1.5 A IF = 100 mA IF = 1.5 A Symbol VF TKVF IR Cj TKfe ϕ Min Typ 1.5 –1.6 20 –0.7 ±12 875 80 0.2 600 300 600 300 Max 1.8 100 Unit V mV/K mA pF %/K deg nm nm nm/K ns ns ns ns TKlp tr tr tf tf lp Dl Type Dedicated Characteristics Tamb = 25_C Parameter Forward Voltage g Test Conditions IF=1.5A, tp=100ms IF=100mA, tp=20ms Radiant Intensity Type TSHA5200/5201 TSHA5202/5203 TSHA5200 TSHA5201 TSHA5202 TSHA5203 TSHA5200 TSHA5201 TSHA5202 TSHA5203 TSHA5200 TSHA5201 TSHA5202 TSHA5203 Symbol VF VF Ie Ie Ie Ie Ie Ie Ie Ie Min Typ 3.2 3.2 40 50 60 65 500 600 700 800 22 23 24 25 Max 4.9 4.5 Unit V V mW/sr mW/sr mW/sr mW/sr mW/sr mW/sr mW/sr mW/sr mW mW mW mW IF=1.5A, tp=100ms Radiant Power IF=100mA, tp=20ms fe fe fe fe 25 30 36 50 300 400 500 600 www.vishay.de • FaxBack +1-408-970-5600 2 (6) Document Number 81019 Rev. 2, 20-May-99 TSHA520. Vishay Telefunken Typical Characteristics (Tamb = 25_C unless otherwise specified) 250 PV – Power Dissipation ( mW ) IF – Forward Current ( mA ) 200 104 tp = 100 ms tp / T = 0.001 103 150 RthJA 100 102 50 0 0 20 40 60 80 100 101 0 94 8005 e 1 2 3 4 94 7957 e Tamb – Ambient Temperature ( °C ) VF – Forward Voltage ( V ) Figure 1. Power Dissipation vs. Ambient Temperature 125 100 V Frel – Relative Forward Voltage IF – Forward Current ( mA ) Figure 4. Forward Current vs. Forward Voltage 1.2 1.1 IF = 10 mA 1.0 0.9 75 50 25 0 0 20 40 60 80 100 0.8 0.7 0 20 40 60 80 100 94 8002 e Tamb – Ambient Temperature ( °C ) 94 7990 e Tamb – Ambient Temperature ( °C ) Figure 2. Forward Current vs. Ambient Temperature Figure 5. Relative Forward Voltage vs. Ambient Temperature 1000 TSHA 5203 I e – Radiant Intensity ( mW/sr ) TSHA 5202 100 TSHA 5201 10 TSHA 5200 1 101 I F – Forward Current ( A ) IFSM = 2.5 A ( Single Pulse ) tp / T = 0.01 100 0.05 0.1 0.2 0.5 10–1 10–2 10–1 100 101 tp – Pulse Duration ( ms ) 102 100 94 8006 e 94 8003 e 101 102 103 IF – Forward Current ( mA ) 104 Figure 3. Pulse Forward Current vs. Pulse Duration Figure 6. Radiant Intensity vs. Forward Current Document Number 81019 Rev. 2, 20-May-99 www.vishay.de • FaxBack +1-408-970-5600 3 (6) TSHA520. Vishay Telefunken 1000 1.25 Fe – Relative Radiant Power Fe – Radiant Power ( mW ) 100 1.0 0.75 0.5 10 1 0.25 0 780 0.1 100 94 8007 e Fe ( l ) rel = Fe ( l ) / Fe ( lp ) l – Wavelength ( nm ) 0° 880 980 IF = 100 mA 101 102 103 IF – Forward Current ( mA ) 104 94 8000 e Figure 7. Radiant Power vs. Forward Current Figure 9. Relative Radiant Power vs. Wavelength 10 ° 20 ° 1.6 I e rel – Relative Radiant Intensity 30° 1.2 I e rel ; Fe rel IF = 20 mA 0.8 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.6 0.4 0.2 0 0.2 0.4 0.6 0.4 0 –10 0 10 94 8020 e 50 100 140 94 8008 e Tamb – Ambient Temperature ( °C ) Figure 8. Rel. Radiant Intensity\Power vs. Ambient Temperature Figure 10. Relative Radiant Intensity vs. Angular Displacement www.vishay.de • FaxBack +1-408-970-5600 4 (6) Document Numbe.


TSHA5202 TSHA5203 TSHA550


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)