TSHA5501

TSHA550. Vishay Telefunken GaAlAs Infrared Emitting Diodes in ø 5 mm (T–1¾) Package Description The TSHA550. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 % radiant power improvement. 94 8390 Features D D D D D D D Extra high radiant power Suitable for high pulse current operation Standard T–1¾ (ø 5 mm) package Angle of half intensity ϕ = ± 24° Peak wavelength lp = 875 nm High reliability Good spectral matching to Si photodetectors Applications Infrared remote control and free air transmission systems with high power and comfortable radiation angle requirements in combination with PIN photodiodes or phototransistors. Because of the reduced radiance absorption in glass at the wavelength of 875 nm, this emitter series is also suitable for systems with panes in the transmission range between emitter and detector. Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Forward Current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 100 200 2.5 210 100 –55...+100 –55...+100 260 350 Unit V mA mA A mW °C °C °C °C K/W tp/T = 0.5, tp = 100 ms tp = 100 ms t x 5sec, 2 mm from ...