Document
TOSHIBA Phototransistor Silicon NPN Epitaxial Planar
TPS622(F)
Opto-electronic Switch Optical Mouse Optical Touch Switch
• Compact side view epoxy resin package • High response speed: tr, tf = 6μs (typ.) • Half value angle: θ1/2 = ±15° (typ.) • Visible light cut type (black package) • Optimum in combination with infrared LED TLN117(F) with
identical external dimensions.
TPS622(F)
Unit in : mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector−emitter voltage
VCEO
30
V
Emitter−collector voltage
VECO
5
V
Collector current
IC 50 mA
Collector power dissipation
Collector power dissipation derating (Ta > 25°C)
Operating temperature range
PC ΔPC / °C
Topr
75 −1 −25~85
mW mW / °C
°C
TOSHIBA
0 – 3G1
Weight: 0.1 g (typ.)
Storage temperature range
Tstg −40~100 °C
Soldering temperature (5s)
Tsol
260 (Note 1)
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Soldering portion of lead: At least 2mm from the body of the device.
Opto-electrical Characteristics (Ta = 25°C)
Characteristic
Dark current
Light current
Collector−emitter saturation voltage
Peak sensitivity wavelength
Half value angle Switching time
Rise time Fall time
Symbol
ID(ICEO)
IL
VCE(sat) λP θ1 2 tr tf
Test Condition
VCE = 24V, E = 0 E = 0.1mW / cm2, VCE = 3V E = 0.1mW / cm2, IL = 15μA
⎯
⎯
(Note 2,3)
VCC = 5V, IC = 2mA RL = 100Ω
Min. Typ. Max. ⎯ 0.005 0.1 27 70 ⎯
⎯ 0.15 0.4 ⎯ 870 ⎯ ⎯ ±15 ⎯ ⎯6⎯ ⎯6⎯
Unit μA μA
V nm °
μs
1 2007-10-01
Note 2: Color temperature = 2870K standard tungsten lamp Note 3: IL classification
Rank
(A) (B) ⎯
IL (μA)
27~80 55~165 27min.
TPS622(F)
Pin Connection
2. Collector 1. Emitter
Precaution
Take particular care with the following: 1. Lead forming should be carried out at least 2 mm from the body of the device without applying forming stress
to the plastic. Soldering should be performed after lead forming.
2 2007-10-01
Allowable power dissipation PC (mW)
PC - Ta
80
60
40
20
0 0 20 40 60 80 100
Ambient temperature Ta (°C)
Light current IL (μA)
TPS622(F)
1200 1000
800 600 400 200
IL - VCE (low voltage region) (typ.)
Ta = 25°C 1.0 0.8
0.6
0.4 E=0.2mW/cm2
0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Collector-emitter voltage VCE (V)
Light current IL (μA)
10000 VCE = 3 V Ta = 25°C
1000
IL - E
(typ.)
100
10 0.01
0.1 1 10
Radiant incidence E (mW/cm2)
Light current IL (μA)
1200 1000
800 600
400 200
0 0
IL - VCE
1.0 0.9
0.8
(typ.)
Ta = 25°C
0.7
.