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TPS622 Dataheets PDF



Part Number TPS622
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon NPN Transistor
Datasheet TPS622 DatasheetTPS622 Datasheet (PDF)

TOSHIBA Phototransistor Silicon NPN Epitaxial Planar TPS622(F) Opto-electronic Switch Optical Mouse Optical Touch Switch • Compact side view epoxy resin package • High response speed: tr, tf = 6μs (typ.) • Half value angle: θ1/2 = ±15° (typ.) • Visible light cut type (black package) • Optimum in combination with infrared LED TLN117(F) with identical external dimensions. TPS622(F) Unit in : mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector−emitter voltage .

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TOSHIBA Phototransistor Silicon NPN Epitaxial Planar TPS622(F) Opto-electronic Switch Optical Mouse Optical Touch Switch • Compact side view epoxy resin package • High response speed: tr, tf = 6μs (typ.) • Half value angle: θ1/2 = ±15° (typ.) • Visible light cut type (black package) • Optimum in combination with infrared LED TLN117(F) with identical external dimensions. TPS622(F) Unit in : mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector−emitter voltage VCEO 30 V Emitter−collector voltage VECO 5 V Collector current IC 50 mA Collector power dissipation Collector power dissipation derating (Ta > 25°C) Operating temperature range PC ΔPC / °C Topr 75 −1 −25~85 mW mW / °C °C TOSHIBA 0 – 3G1 Weight: 0.1 g (typ.) Storage temperature range Tstg −40~100 °C Soldering temperature (5s) Tsol 260 (Note 1) °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Soldering portion of lead: At least 2mm from the body of the device. Opto-electrical Characteristics (Ta = 25°C) Characteristic Dark current Light current Collector−emitter saturation voltage Peak sensitivity wavelength Half value angle Switching time Rise time Fall time Symbol ID(ICEO) IL VCE(sat) λP θ1 2 tr tf Test Condition VCE = 24V, E = 0 E = 0.1mW / cm2, VCE = 3V E = 0.1mW / cm2, IL = 15μA ⎯ ⎯ (Note 2,3) VCC = 5V, IC = 2mA RL = 100Ω Min. Typ. Max. ⎯ 0.005 0.1 27 70 ⎯ ⎯ 0.15 0.4 ⎯ 870 ⎯ ⎯ ±15 ⎯ ⎯6⎯ ⎯6⎯ Unit μA μA V nm ° μs 1 2007-10-01 Note 2: Color temperature = 2870K standard tungsten lamp Note 3: IL classification Rank (A) (B) ⎯ IL (μA) 27~80 55~165 27min. TPS622(F) Pin Connection 2. Collector 1. Emitter Precaution Take particular care with the following: 1. Lead forming should be carried out at least 2 mm from the body of the device without applying forming stress to the plastic. Soldering should be performed after lead forming. 2 2007-10-01 Allowable power dissipation PC (mW) PC - Ta 80 60 40 20 0 0 20 40 60 80 100 Ambient temperature Ta (°C) Light current IL (μA) TPS622(F) 1200 1000 800 600 400 200 IL - VCE (low voltage region) (typ.) Ta = 25°C 1.0 0.8 0.6 0.4 E=0.2mW/cm2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Collector-emitter voltage VCE (V) Light current IL (μA) 10000 VCE = 3 V Ta = 25°C 1000 IL - E (typ.) 100 10 0.01 0.1 1 10 Radiant incidence E (mW/cm2) Light current IL (μA) 1200 1000 800 600 400 200 0 0 IL - VCE 1.0 0.9 0.8 (typ.) Ta = 25°C 0.7 .


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