TPV376 POWER TRANSISTOR Datasheet

TPV376 Datasheet, PDF, Equivalent


Part Number

TPV376

Description

NPN SILICON RF POWER TRANSISTOR

Manufacture

Advanced Semiconductor

Total Page 2 Pages
Datasheet
Download TPV376 Datasheet


TPV376
TPV376
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TPV376 is a Common
Emitter Device Designed for High
Linearity Class A Television Band III
(170-230 MHz) Applications.
FEATURES INCLUDE:
Gold Metalization
Emitter Ballasting
PACKAGE STYLE .550 4L STUD(1/4)
MAXIMUM RATINGS
IC 16 A
VCB
PDISS
TJ
T STG
θ JC
60 V
150 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
1.2 OC/W
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
BVCEO
IC = 100 mA
BVCER
IC = 100 mA
RBE = 10
BVCBO
IC = 100 mA
BVEBO
IE = 20 mA
hFE VCE = 5.0 V
IC = 1.0 A
MINIMUM TYPICAL MAXIMUM
30
60
60
4.0
10 120
UNITS
V
V
V
V
---
Cob VCB = 30 V
f = 1.0 MHz
150 pF
Pout
ψ
IMD1
VCE = 28 V
IC = 3.5 A
f = 225 MHz
VCE = 28 V
IE = 3.5 A
LOAD VSWR = :1
PREF =20 W
f = 225 MHz
Pref = 30 W
VISION CARRIER = -8.0 dB
SOUND CARRIER = -7.0 dB SIDEBAND SIG. = -16 dB
VCE = 28 V
IE = 3.5 A
f = 225 MHz
20 W
NO DEGRADATION IN OUTPUT POWER
-53 dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1

TPV376
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1202 TELEX: 18-2651 FAX (818) 765-3004


Features TPV376 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TPV376 is a Common Emitter Device Designed for High Linea rity Class A Television Band III (170-2 30 MHz) Applications. PACKAGE STYLE .5 50 4L STUD(1/4) FEATURES INCLUDE: • Gold Metalization • Emitter Ballastin g MAXIMUM RATINGS IC VCB PDISS TJ T ST G θ JC 16 A 60 V 150 W @ TC = 25 OC -6 5 OC to +200 OC -65 OC to +150 OC 1.2 O C/W CHARACTERISTICS SYMBOL BV CEO BV C ER BV CBO BV EBO hFE Cob Pout ψ IC = 1 00 mA IC = 100 mA IC = 100 mA IE = 20 m A VCE = 5.0 V VCB = 30 V VCE = 28 V TC = 25 OC TEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 30 60 60 4.0 UNITS V V V V IC = 1.0 A f = 1.0 MHz I C = 3.5 A IE = 3.5 A f = 225 MHz PREF = 20 W f = 225 MHz 10 120 150 --pF W 20 NO DEGRADATION IN OUTPUT POWER VCE = 28 V LOAD VSWR = ∞:1 Pref = 30 W I MD1 SOUND CARRIER = -7.0 dB VISION CA RRIER = -8.0 dB SIDEBAND SIG. = -16 dB -53 dB VCE = 28 V IE = 3.5 A f = 2 25 MHz REV. A A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETH.
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