TPV6030
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TPV6030 is Designed for Television Band IV & V Application...
TPV6030
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The ASI TPV6030 is Designed for Television Band IV & V Applications up to 860 MHz.
PACKAGE STYLE .400 BAL FLG(C)
.080x45° A B FULL R (4X).060 R E D C .1925 F H I N L G M
FEATURES:
Common Emitter PG = 9.5 dB at 35 W/860 MHz Omnigold™ Metalization System
MAXIMUM RATINGS
IC VCEO VCBO VEBO PDISS TJ TSTG θJC 15 A 28 V 55 V 4.0 V 160 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 1.1 °C/W
DIM A B C D E F G H I J K L M N .395 / 10.03 .850 / 21.59 1.335 / 33.91 .003 / 0.08 .060 / 1.52 .082 / 2.08 .120 / 3.05 .380 / 9.65 .780 / 19.81 .435 / 11.05 1.090 / 27.69 MIN IMUM
inches / m m
J
K
MAXIMUM
inches / m m
.220 / 5.59 .210 / 5.33
.230 / 5.84 .130 / 3.30 .390 / 9.91 .820 / 20.83
1.345 / 34.16 .007 / 0.18 .070 / 1.78 .100 / 2.54 .205 / 5.21 .407 / 10.34 .870 / 22.10
CHARACTERISTICS
SYMBOL
BVCBO BVCER BVEBO ICER hFE COB PG IMD POUT IC = 35 mA IC = 35 mA IE = 10 mA VCE = 30 V VCE = 10 V VCB = 28 V
TC = 25 °C
NONETEST CONDITIONS
RBE = 75 Ω RBE = 75 Ω IC = 2.0 A f = 1.0 MHz IC = 4.5 A IC = 4.5 A f = 860 MHz f = 860 MHz
MINIMUM TYPICAL MAXIMUM
55 40 4.0 10 15 45 95 35 10.5 -52 40 -51 100
UNITS
V V V mA --pF dB dBc W
VCC = 25 V POUT = 20 W VCE = 25 V
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
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