TPV6030 POWER TRANSISTOR Datasheet

TPV6030 Datasheet, PDF, Equivalent


Part Number

TPV6030

Description

NPN SILICON RF POWER TRANSISTOR

Manufacture

Advanced Semiconductor

Total Page 1 Pages
Datasheet
Download TPV6030 Datasheet


TPV6030
TPV6030
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TPV6030 is Designed for
Television Band IV & V Applications
up to 860 MHz.
FEATURES:
Common Emitter
PG = 9.5 dB at 35 W/860 MHz
Omnigold™ Metalization System
MAXIMUM RATINGS
IC 15 A
VCEO
28 V
VCBO
55 V
VEBO
4.0 V
PDISS
160 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC 1.1 °C/W
PACKAGE STYLE .400 BAL FLG(C)
.080x45° A B
FULL R
(4X).060 R
E
D
C
.1925
I
F
G
H
N
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
M IN IM U M
inches / mm
.220 / 5.59
.120 / 3.05
.380 / 9.65
.780 / 19.81
1.335 / 33.91
.003 / 0.08
.060 / 1.52
.082 / 2.08
.210 / 5.33
.435 / 11.05
1.090 / 27.69
.395 / 10.03
.850 / 21.59
M
L
JK
MAXIMUM
inches / mm
.230 / 5.84
.130 / 3.30
.390 / 9.91
.820 / 20.83
1.345 / 34.16
.007 / 0.18
.070 / 1.78
.100 / 2.54
.205 / 5.21
.407 / 10.34
.870 / 22.10
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BVCBO
IC = 35 mA
BVCER
IC = 35 mA
RBE = 75
BVEBO
IE = 10 mA
ICER
VCE = 30 V
RBE = 75
hFE VCE = 10 V
IC = 2.0 A
MINIMUM TYPICAL MAXIMUM
55
40
4.0
10
15 100
UNITS
V
V
V
mA
---
COB
VCB = 28 V
f = 1.0 MHz
45
pF
PG
IMD
POUT
VCC = 25 V
POUT = 20 W
VCE = 25 V
IC = 4.5 A
IC = 4.5 A
f = 860 MHz
95
10.5
dB
-52 -51 dBc
f = 860 MHz
35
40
W
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1


Features TPV6030 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TPV6030 is Design ed for Television Band IV & V Applicati ons up to 860 MHz. PACKAGE STYLE .400 BAL FLG(C) .080x45° A B FULL R (4X).06 0 R E D C .1925 F H I N L G M FEATURES : • Common Emitter • PG = 9.5 dB at 35 W/860 MHz • Omnigold™ Metalizat ion System MAXIMUM RATINGS IC VCEO VCB O VEBO PDISS TJ TSTG θJC 15 A 28 V 55 V 4.0 V 160 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 1.1 °C/W DIM A B C D E F G H I J K L M N .395 / 10.03 .850 / 21.59 1.335 / 33.91 .003 / 0.08 .060 / 1.52 .082 / 2.08 .120 / 3. 05 .380 / 9.65 .780 / 19.81 .435 / 11.0 5 1.090 / 27.69 MIN IMUM inches / m m J K MAXIMUM inches / m m .220 / 5.59 .210 / 5.33 .230 / 5.84 .130 / 3.30 . 390 / 9.91 .820 / 20.83 1.345 / 34.16 .007 / 0.18 .070 / 1.78 .100 / 2.54 .20 5 / 5.21 .407 / 10.34 .870 / 22.10 CHA RACTERISTICS SYMBOL BVCBO BVCER BVEBO I CER hFE COB PG IMD POUT IC = 35 mA IC = 35 mA IE = 10 mA VCE = 30 V VCE = 10 V VCB = 28 V TC = 25 °C NONETEST CONDIT.
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