POWER TRANSISTOR. TPV695A Datasheet


TPV695A TRANSISTOR. Datasheet pdf. Equivalent


TPV695A


UHF LINEAR POWER TRANSISTOR
MOTOROLA
The RF Line

SEMICONDUCTOR TECHNICAL DATA

Order this document by TPV695A/D

UHF Linear Power Transistor
Designed for driver and output stages in band IV and V TV transposers and transmitter amplifiers. The TPV695A uses gold metallized die with diffused emitter ballast resistors to enhance reliability, ruggedness and linearity. • Band IV and V (470– 860 MHz) • 14 W — Pref @ – 47 dB IMD • 25 V — VCC • High Gain — 10 dB Min, Class A, f = 860 MHz • Gold Metallization for Reliability • Push–Pull Package MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Operating Junction Temperature Storage Temperature Range Operating Case Temperature Range Symbol VCEO VCES VEBO IC PD TJ Tstg TC Value 28 50 4.0 5.0 50 0.4 200 – 50 to + 200 –15 to + 70 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C °C

TPV695A
14 W, 470 – 860 MHz UHF LINEAR POWER TRANSISTOR

CASE 395B–01, STYLE 1 BMA2

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RθJC Symbol Min Typ Max 2.5 Unit °C/W

ELECTRICAL CHARACTERISTICS
Characteristic Max Unit

OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 20 mA, IB = 0) Collector–Emitter Breakdown Voltage (IC = 20 mA, VBE = 0) Emitter–Base Breakdown Voltage (IE = 5.0 mA, IC = 0) Collector Cutoff Current (VCB = ...



TPV695A
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by TPV695A/D
The RF Line
UHF Linear Power Transistor
Designed for driver and output stages in band IV and V TV transposers and
transmitter amplifiers. The TPV695A uses gold metallized die with diffused
emitter ballast resistors to enhance reliability, ruggedness and linearity.
Band IV and V (470– 860 MHz)
14 W — Pref @ – 47 dB IMD
25 V — VCC
High Gain — 10 dB Min, Class A, f = 860 MHz
Gold Metallization for Reliability
Push–Pull Package
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VCEO
VCES
VEBO
IC
PD
28 Vdc
50 Vdc
4.0 Vdc
5.0 Adc
50 Watts
0.4 W/°C
Operating Junction Temperature
TJ
Storage Temperature Range
Tstg
Operating Case Temperature Range
TC
THERMAL CHARACTERISTICS
Characteristic
200
– 50 to + 200
–15 to + 70
°C
°C
°C
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 20 mA, IB = 0)
Collector–Emitter Breakdown Voltage (IC = 20 mA, VBE = 0)
Emitter–Base Breakdown Voltage (IE = 5.0 mA, IC = 0)
Collector Cutoff Current (VCB = 19 V, IE = 0)
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 A, VCE = 10 V)
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 28 V, IE = 0, f = 1.0 MHz)
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCE = 25 V, Pout = 14 W, f = 860 MHz, IC = 2.0 x 900 mA)
Overdrive (no degradation)
(f = 470 MHz, VCE = 25 V, IC = 2.0 x 900 mA)
Intermodulation Distortion, 3 Tone
(f = 860 MHz, VCE = 25 V, IE = 2.0 x 900 mA, Pref = 14 W,
Vision Carrier = – 7.0 dB, Sound Carrier = –8.0 dB,
Sideband Signal = –16 dB, Specification TV05001)
V(BR)CEO
V(BR)CES
V(BR)EBO
ICBO
hFE
Cob
GPE
Pinover
IMD1
Symbol
RθJC
Min
28
50
4.0
20
10
12.5
TPV695A
14 W, 470 – 860 MHz
UHF LINEAR
POWER TRANSISTOR
CASE 395B–01, STYLE 1
BMA2
Max
2.5
Typ Max
——
——
——
— 15
— 80
18 20
——
——
– 47 – 46
Unit
°C/W
Unit
Vdc
Vdc
Vdc
mAdc
pF
dB
W
dB
REV 7
©MMOotoTrOolaR, OIncL.A19R95F DEVICE DATA
TPV695A
1

TPV695A
Dimension: width/length mm
Board Material — 1/50, Teflon Glass, εr = 2.55
2.7
0.1 µF
180 pF
12 pF
2/4 1.8/7
5.6 pF
12 pF
12 pF
0.1 µF
2.7
0.8/7
22 pF
4/5
5.6 pF
22 pF
180 pF
IN (50 )
BALUN*
BALUN*
OUT (50 )
TPV695A
2
— Balun is 50 unbalanced to 2 x 25 balanced
Figure 1. 470 – 860 MHz Test Circuit
MOTOROLA RF DEVICE DATA




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