TPV695A

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by TPV695A/D UHF Linear Power Transistor Designed for driver and output stages in band IV and V TV transposers and transmitter amplifiers. The TPV695A uses gold metallized die with diffused emitter ballast resistors to enhance reliability, ruggedness and linearity. Band IV and V (470– 860 MHz) 14 W — Pref @ – 47 dB IMD 25 V — VCC High Gain — 10 dB Min, Class A, f = 860 MHz Gold Metallization for Reliability Push–Pull Package MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Operating Junction Temperature Storage Temperature Range Operating Case Temperature Range Symbol VCEO VCES VEBO IC PD TJ Tstg TC Value 28 50 4.0 5.0 50 0.4 200 – 50 to + 200 –15 to + 70 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C °C TPV695A 14 W, 470 – 860 MHz UHF LINEAR POWER TRANSISTOR CASE 395B–01, STYLE 1 BMA2 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Symbol Min Typ Max 2.5 Unit °C/W ELECTRICAL CHARACTERISTICS Characteristic Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 20 mA, IB = 0) Collector–Emitter Breakdown Voltage (IC = 20 mA, VBE = 0) Emitter–Base Breakdown Voltage (IE = 5.0 mA, IC = 0) Collector Cutoff Current (VCB = 19 V, IE = 0) V(BR)CEO V(BR)CES V(BR)EBO ICBO hFE Cob GPE Pinover IMD1 28 50 4.0 — — — — — — — — 15 ...