TPV8100B POWER TRANSISTOR Datasheet

TPV8100B Datasheet, PDF, Equivalent


Part Number

TPV8100B

Description

NPN SILICON RF POWER TRANSISTOR

Manufacture

Motorola Inc

Total Page 6 Pages
Datasheet
Download TPV8100B Datasheet


TPV8100B
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
The TPV8100B is designed for output stages in band IV and V TV transmitter
amplifiers. It incorporates high value emitter ballast resistors, gold metalliza-
tions and offers a high degree of reliability and ruggedness.
Including double input and output matching networks, the TPV8100B
features high impedances. It can easily operate in a full 470 MHz to 860 MHz
bandwidth in a single and simple circuit.
To be used class AB for TV band IV and V.
Specified 28 Volts, 860 MHz Characteristics
Output Power = 125 Watts (peak sync.)
Output Power = 100 Watts (CW)
Minimum Gain = 8.5 dB
Specified 32 Volts, 860 MHz Characteristics
Output Power = 150 Watts (peak sync.)
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
Order this document
by TPV8100B/D
TPV8100B
150 W, 470 – 860 MHz
NPN SILICON
RF POWER TRANSISTOR
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector–Current — Continuous
Total Device Dissipation @ 25°C Case
Derate above 25°C
Operating Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (1)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA, Rbe = 75 )
V(BR)CER
Collector–Emitter Breakdown Voltage
(IC = 10 mAdc)
V(BR)EBO
Collector–Base Breakdown Voltage
(IE = 20 mAdc)
V(BR)CBO
Collector–Emitter Leakage
(VCE = 28 V, Rbe = 75 )
ICER
NOTE:
1. Thermal resistance is determined under specified RF operating condition.
Symbol
VCER
VCBO
VEBO
IC
PD
TJ
Tstg
Symbol
RθJC
Min
30
4
65
REV 6
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
CASE 398–03, STYLE 1
Value
40
65
4
12
215
1.25
200
– 65 to +150
Max
0.8
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Unit
°C/W
Typ Max Unit
— — Vdc
— — Vdc
— — Vdc
— 10 mA
(continued)
TPV8100B
1

TPV8100B
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
ON CHARACTERISTICS
DC Current Gain
(IC = 2 Adc, VCE = 10 Vdc)
hFE 30 —
DYNAMIC CHARACTERISTICS
Output Capacitance (each side) (2)
(VCB = 28 V, IE = 0, f = 1 MHz)
Cob — 44
FUNCTIONAL TESTS IN CW (SOUND)
Common–Emitter Amplifier Power Gain
(VCC = 28 V, Pout = 100 W, ICQ = 2 x 50 mA, f = 860 MHz)
Gp 8.5 9.5
Collector Efficiency
(VCC = 28 V, Pout = 100 W, IQ = 2 x 50 mA, f = 860 MHz)
η 55 58
Output Power @ 1 dB Compression (Pref = 25 W)
(VCC = 28 V, ICQ = 2 x 50 mA, f = 860 MHz)
Pout 100 110
FUNCTIONAL TESTS IN VIDEO (STANDARD BLACK LEVEL)
Peak Output Power (synch.)
(VCC = 28 V, ICQ = 2 x 50 mA, f = 860 MHz)
Pout 125 135
Peak Output Power (synch.)
(VCC = 32 V, ICQ = 2 x 25 mA, f = 860 MHz)
Pout 150 160
Recommended Quiescent Current
ICQ — —
NOTE:
2. Value of “Cob” is that of die only. It is not measurable in TPV8100B because of internal matching network.
Max
120
2 x 0.3
Unit
pF
dB
%
W
W
W
A
f = 470 MHz
Zin
665
860
f = 860 MHz
470
ZOL*
665 Zo = 10
f
(MHz)
Zin
(Ohms)
ZOL*
(Ohms)
470
1.95 + j3.67
10.0 + j9.50
665
3.65 + j6.82
9.23 + j1.30
8
860
6.66 + j13.8
4.45 + j5.22
ZOL* = Conjugate of optimum load impedance into which
ZOL* = the device operates at a given output power,
ZOL* = voltage, current and frequency.
NOTE: Zin & ZOL* are given from base–to–base and
NOTE: collector–to–collector respectively.
Input and Output impedances with circuit tuned for maximum linearity @ VCC = 28 V / ICQ = 2 x 50 mA / Pout = 100 W
Figure 1. Series Equivalent Input/Output Impedances
TPV8100B
2
MOTOROLA RF DEVICE DATA


Features MOTOROLA The RF Line SEMICONDUCTOR TECH NICAL DATA Order this document by TPV8 100B/D NPN Silicon RF Power Transistor The TPV8100B is designed for output st ages in band IV and V TV transmitter am plifiers. It incorporates high value em itter ballast resistors, gold metalliza tions and offers a high degree of relia bility and ruggedness. Including double input and output matching networks, th e TPV8100B features high impedances. It can easily operate in a full 470 MHz t o 860 MHz bandwidth in a single and sim ple circuit. • To be used class AB fo r TV band IV and V. • Specified 28 Vo lts, 860 MHz Characteristics Output Pow er = 125 Watts (peak sync.) Output Powe r = 100 Watts (CW) Minimum Gain = 8.5 d B • Specified 32 Volts, 860 MHz Chara cteristics Output Power = 150 Watts (pe ak sync.) • Circuit board photomaster available upon request by contacting R F Tactical Marketing in Phoenix, AZ. T PV8100B 150 W, 470 – 860 MHz NPN SILI CON RF POWER TRANSISTOR CASE 398–03, STYLE 1 MAXIMUM RATINGS Rating Col.
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