TPV8100B

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by TPV8100B/D NPN Silicon RF Power Transistor The TPV8100B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. Including double input and output matching networks, the TPV8100B features high impedances. It can easily operate in a full 470 MHz to 860 MHz bandwidth in a single and simple circuit. To be used class AB for TV band IV and V. Specified 28 Volts, 860 MHz Characteristics Output Power = 125 Watts (peak sync.) Output Power = 100 Watts (CW) Minimum Gain = 8.5 dB Specified 32 Volts, 860 MHz Characteristics Output Power = 150 Watts (peak sync.) Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. TPV8100B 150 W, 470 – 860 MHz NPN SILICON RF POWER TRANSISTOR CASE 398–03, STYLE 1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector–Current — Continuous Total Device Dissipation @ 25°C Case Derate above 25°C Operating Junction Temperature Storage Temperature Range Symbol VCER VCBO VEBO IC PD TJ Tstg Characteristic Thermal Resistance, Junction to Case (1) Symbol RθJC Value 40 65 4 12 215 1.25 200 – 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Max 0.8 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)...