TQ9147B Amplifier IC Datasheet

TQ9147B Datasheet, PDF, Equivalent


Part Number

TQ9147B

Description

2-Stage AMPS Power Amplifier IC

Manufacture

TriQuint Semiconductor

Total Page 10 Pages
Datasheet
Download TQ9147B Datasheet


TQ9147B
WIRELESS COMMUNICATIONS DIVISION
RFOUT 1
GND 2
GND 3
GND 4
GND 5
RFIN 6
GND 7
VG1 8
16 RFOUT
15 GND
14 GND
13 GND
12 GND
11 VG2
10 GND
9 VD1
Product Description
The TQ9147 is a high efficiency two stage GaAs MESFET power amplifier IC
intended for use in AMPS (IS-19) applications that operate in the US Cellular (824 -
849 MHz) band. The TQ9147 requires minimal external RF circuitry and operates
from a 4.8-Volt supply. With its flexible, off-chip, single component output matching
circuit, the TQ9147 is suitable for use in other applications near the cellular band,
such as 900 MHz ISM applications.
The TQ9147 utilizes a space saving SO-16 plastic package that minimizes board
area and cost.
TQ9147B
DATA SHEET
2-Stage AMPS
Power Amplifier IC
Features
§High Efficiency
§+32 dBm Output Power
§50Matched Input
§SO-16 Plastic Package
§Monolithic Power Amp
Applications
§AMPS Mobile Phones
§CDPD Modems
§General ISM Band Applications
Electrical Specifications1
Parameter
Output Power
Efficiency
Min
+31.5
55
Typ
+32
60
Max
Units
dBm
%
Note 1: Test Conditions: VDD = 4.8 V, PIN = +7 dBm, Freq. = 824 & 849 MHz, TC = 25°C,
Min/max values 100% production tested.
Electrical Characteristics
For additional information and latest specifications, see our website: www.triquint.com
1

TQ9147B
TQ9147B
Data Sheet
Electrical Characteristics
Parameter 1
Frequency
Supply Voltage (VDD)
Temperature
POUT
Efficiency
Rx band Noise 2
Small Signal Gain
Power Gain
Input Return Loss
Harmonics
2nd Harmonic
3rd Harmonic
4th Harmonic
Spurious (Stability)
RF Off Isolation
Ruggedness
Conditions
tuned for cellular band
measured at case
VDD = 4.8 V
VDD = 4.3 V
PIN = -30 to +7 dBm
PIN = -10 dBm
POUT = 32 dBm (typ)
PIN = -30 to +7 dBm
PIN = -30 to +7 dBm
VDD at burnout
Min
824
2.7
-40
31.5
55
Typ/Nom
4.8
25
32
30
60
-90
32
25
10
-70
20
6.5
Max
849
6.0
+110
-30
-35
-35
Units
MHz
V
oC
dBm
dBm
%
dBm
dB
dB
dB
dBc
dBc
dBc
dBc/30 kHz
dBc
V
Note 1: Test Conditions: VDD = 4.8 V, PIN = +7 dBm, Freq. = 824 & 849 MHz, VGG = 3.5 V, TC = 25°C.
Note 2: Noise power is measured in 30 kHz band width at the transmit frequency plus 45 MHz
Note 3: Load is set to 50 ohms, output power measured at nominal test conditions. Load VSWR is set to 10:1 and the angle is varied 360 degrees over 5 seconds.
Load set to 50 ohms, output power remeasured and compared with the first measurement to check for no degradation from the first measurement.
Absolute Maximum Ratings
Parameter
DC Power Supply 1
DC Gate Voltage
RF Input Power
Storage Temperature
Operating Temperature (case)
Note 1: Into a 10:1 mismatch.
Value
8.0
-5.0
20
-55 to 150
-40 to 110
Units
V
V
dBm
°C
°C
2 For additional information and latest specifications, see our website: www.triquint.com


Features WIRELESS COMMUNICATIONS DIVISION RFOUT GND GND GND GND RFIN GND VG1 1 16 RF OUT GND GND GND GND VG2 GND VD1 TQ9147 B DATA SHEET 2 15 3 14 2-Stage AMP S Power Amplifier IC 4 13 5 12 6 11 Features §High Efficiency §+32 dB m Output Power §50Ω Matched Input § SO-16 Plastic Package §Monolithic Powe r Amp 7 10 8 9 Product Description The TQ9147 is a high efficiency two st age GaAs MESFET power amplifier IC inte nded for use in AMPS (IS-19) applicatio ns that operate in the US Cellular (824 849 MHz) band. The TQ9147 requires min imal external RF circuitry and operates from a 4.8-Volt supply. With its flexi ble, off-chip, single component output matching circuit, the TQ9147 is suitabl e for use in other applications near th e cellular band, such as 900 MHz ISM ap plications. The TQ9147 utilizes a space saving SO-16 plastic package that mini mizes board area and cost. Application s §AMPS Mobile Phones §CDPD Modems § General ISM Band Applications Electrical Specifications1 Parameter Outpu.
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