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TQ9147B Dataheets PDF



Part Number TQ9147B
Manufacturers TriQuint Semiconductor
Logo TriQuint Semiconductor
Description 2-Stage AMPS Power Amplifier IC
Datasheet TQ9147B DatasheetTQ9147B Datasheet (PDF)

WIRELESS COMMUNICATIONS DIVISION RFOUT GND GND GND GND RFIN GND VG1 1 16 RFOUT GND GND GND GND VG2 GND VD1 TQ9147B DATA SHEET 2 15 3 14 2-Stage AMPS Power Amplifier IC 4 13 5 12 6 11 Features §High Efficiency §+32 dBm Output Power §50Ω Matched Input §SO-16 Plastic Package §Monolithic Power Amp 7 10 8 9 Product Description The TQ9147 is a high efficiency two stage GaAs MESFET power amplifier IC intended for use in AMPS (IS-19) applications that operate in the US Cellular (82.

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WIRELESS COMMUNICATIONS DIVISION RFOUT GND GND GND GND RFIN GND VG1 1 16 RFOUT GND GND GND GND VG2 GND VD1 TQ9147B DATA SHEET 2 15 3 14 2-Stage AMPS Power Amplifier IC 4 13 5 12 6 11 Features §High Efficiency §+32 dBm Output Power §50Ω Matched Input §SO-16 Plastic Package §Monolithic Power Amp 7 10 8 9 Product Description The TQ9147 is a high efficiency two stage GaAs MESFET power amplifier IC intended for use in AMPS (IS-19) applications that operate in the US Cellular (824 849 MHz) band. The TQ9147 requires minimal external RF circuitry and operates from a 4.8-Volt supply. With its flexible, off-chip, single component output matching circuit, the TQ9147 is suitable for use in other applications near the cellular band, such as 900 MHz ISM applications. The TQ9147 utilizes a space saving SO-16 plastic package that minimizes board area and cost. Applications §AMPS Mobile Phones §CDPD Modems §General ISM Band Applications Electrical Specifications1 Parameter Output Power Efficiency Min +31.5 55 Typ +32 60 Max Units dBm % Note 1: Test Conditions: VDD = 4.8 V, PIN = +7 dBm, Freq. = 824 & 849 MHz, TC = 25°C, Min/max values 100% production tested. Electrical Characteristics For additional information and latest specifications, see our website: www.triquint.com 1 TQ9147B Data Sheet Electrical Characteristics Parameter 1 Frequency Supply Voltage (VDD) Temperature POUT Efficiency Rx band Noise Power Gain Input Return Loss Harmonics 2nd Harmonic 3rd Harmonic 4th Harmonic Spurious (Stability) RF Off Isolation Ruggedness VDD at burnout PIN = -30 to +7 dBm -70 20 6.5 -30 -35 -35 dBc dBc dBc dBc/30 kHz dBc V 2 Conditions tuned for cellular band Min 824 2.7 Typ/Nom 4.8 25 32 30 55 60 -90 32 25 10 Max 849 6.0 +110 Units MHz V oC measured at case VDD = 4.8 V VDD = 4.3 V PIN = -30 to +7 dBm PIN = -10 dBm POUT = 32 dBm (typ) PIN = -30 to +7 dBm -40 31.5 dBm dBm % dBm dB dB dB Small Signal Gain Note 1: Test Conditions: VDD = 4.8 V, PIN = +7 dBm, Freq. = 824 & 849 MHz, VGG = 3.5 V, TC = 25°C. Note 2: Noise power is measured in 30 kHz band width at the transmit frequency plus 45 MHz Note 3: Load is set to 50 ohms, output power measured at nominal test conditions. Load VSWR is set to 10:1 and the angle is varied 360 degrees over 5 seconds. Load set to 50 ohms, output power remeasured and compared with the first measurement to check for no degradation from the first measurement. Absolute Maximum Ratings Parameter DC Power Supply DC Gate Voltage RF Input Power Storage Temperature Operating Temperature (case) Note 1: Into a 10:1 mismatch. 1 Value 8.0 -5.0 20 -55 to 150 -40 to 110 Units V V dBm °C °C 2 For additional information and latest specifications, see our website: www.triquint.com TQ9147B Data Sheet Typical Performance Test Conditions (Unless Otherwise Specified): VDD = 4.8 V, PIN = +7 dBm, Freq. = 824 & 849 MHz, TC = 25°C, constant gate voltages: VG1 = -1.5 V, VG2 = -2.2 V. Output Power vs. Frequency and VDD 40 35 POUT .


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