TR16-600-125 SILICON TRIACS Datasheet

TR16-600-125 Datasheet, PDF, Equivalent


Part Number

TR16-600-125

Description

SILICON TRIACS

Manufacture

TRSYS

Total Page 3 Pages
Datasheet
Download TR16-600-125 Datasheet


TR16-600-125
TR16 SERIES
SILICON TRIACS
l High Current Triacs
l 16 A RMS
l Glass Passivated Wafer
l 400 V to 800 V Off-State Voltage
l 125 A Peak Current
l Max IGT of 50 mA (Quadrants 1 - 3)
MT1
MT2
G
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
TR16-400-125
Repetitive peak off-state voltage (see Note 1)
TR16-600-125
TR16-700-125
TR16-800-125
Full-cycle RMS on-state current at (or below) 70°C case temperature (see Note 2)
Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3)
Peak gate current
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
SYMBOL
VDRM
IT(RMS)
ITSM
IGM
TC
Tstg
TL
VALUE
400
600
700
800
16
125
±1
-40 to +110
-40 to +125
230
UNIT
V
A
A
A
°C
°C
°C
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at
the rate of 400 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETE R
TEST CONDITIONS
MIN TYP MAX UNIT
IDRM
Repetitive peak
off-state current
VD = rated VDRM
IG = 0
TC = 110°C
±2 mA
Gate trigger
IGT current
Gate trigger
VGT voltage
VT On-state voltage
IH Holding current
Vsupply = +12 V†
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
Vsupply = +12 V†
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
ITM = ±22.5 A
Vsupply = +12 V†
Vsupply = -12 V†
RL = 10 W
RL = 10 W
RL = 10 W
RL = 10 W
RL = 10 W
RL = 10 W
RL = 10 W
RL = 10 W
IG = 50mA
IG = 0
IG = 0
tp(g) > 20 m s
tp(g) > 20 m s
tp(g) > 20 m s
tp(g) > 20 m s
tp(g) > 20 m s
tp(g) > 20 m s
tp(g) > 20 m s
tp(g) > 20 m s
(see Note 4)
Init’ ITM = 100 mA
Init’ ITM = -100 mA
12
-19
-16
34
0.8
-0.8
-0.8
0.9
±1.4
22
-12
50
-50
-50
2
-2
-2
2
±1.7
40
-40
mA
V
V
mA
† All voltages are with respect to Main Terminal 1.
NOTE 4: This parameter must be measured using pulse techniques, tp = £ 1 ms, duty cycle £ 2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.

TR16-600-125
TR16 SERIES
SILICON TRIACS
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
PARAMETE R
TEST CONDITIONS
MIN TYP MAX UNIT
IL
dv/dt
Latching current
Critical rate of rise of
off-state voltage
Vsupply = +12 V†
Vsupply = -12 V†
VD = Rated VD
(see Note 5)
IG = 0
TC = 110°C
±400
80
-80
mA
V/µs
dv/dt(c)
di/dt
Critical rise of
commutation voltage
Critical rate of rise of
on -state current
VD = Rated VD
di/dt = 0.5 IT(RMS)/ms
VD = Rated VD
diG/dt = 50 mA/m s
IGT = 50 mA
TC = 80°C
IT = 1.4 IT(RMS)
TC = 110°C
±1.2 ±9
±100
V/µs
A/µs
† All voltages are with respect to Main Terminal 1.
NOTE 5: The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:
RG = 100 W , tp(g) = 20 m s, tr = £ 15 ns, f = 1 kHz.
thermal characteristics
Rq JC
Rq JA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
1.9 °C/W
62.5 °C/W
TYPICAL CHARACTERISTICS
GATE TRIGGER CURRENT
vs
CASE TEMPERATURE
1000
GATE TRIGGER VOLTAGE
vs
CASE TEMPERATURE
10
100
10 1
1 Vsupply IGTM
++
+-
--
-+
0·1
-60 -40 -20
0
VAA = ± 12 V
RL = 10 W
tp(g) = 20 µs
20 40 60 80 100 120
TC - Case Temperature - °C
Figure 1.
Vsupply IGTM
}+ +
+-
--
-+
VAA = ± 12 V
RL = 10 W
tp(g) = 20 µs
0·1
-60 -40 -20 0 20 40 60 80 100 120
TC - Case Temperature - °C
Figure 2.


Features TR16 SERIES SILICON TRIACS l l l l l l High Current Triacs 16 A RMS Glass Pas sivated Wafer 400 V to 800 V Off-State Voltage 125 A Peak Current Max IGT of 5 0 mA (Quadrants 1 - 3) Pin 2 is in elec trical contact with the mounting base. TO-220 PACKAGE (TOP VIEW) MT1 MT2 G 1 2 3 absolute maximum ratings over ope rating case temperature (unless otherwi se noted) RATING TR16-400-125 Repetitiv e peak off-state voltage (see Note 1) T R16-600-125 TR16-700-125 TR16-800-125 F ull-cycle RMS on-state current at (or b elow) 70°C case temperature (see Note 2) Peak on-state surge current full-sin e-wave at (or below) 25°C case tempera ture (see Note 3) Peak gate current Ope rating case temperature range Storage t emperature range Lead temperature 1.6 m m from case for 10 seconds IT(RMS) ITSM IGM TC Tstg TL VDRM SYMBOL VALUE 400 6 00 700 800 16 125 ±1 -40 to +110 -40 t o +125 230 A A A °C °C °C V UNIT NO TES: 1. These values apply bidirectiona lly for any value of resistance between the gate and Main Terminal 1..
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