TR8-700-70 SILICON TRIACS Datasheet

TR8-700-70 Datasheet, PDF, Equivalent


Part Number

TR8-700-70

Description

SILICON TRIACS

Manufacture

TRSYS

Total Page 5 Pages
Datasheet
Download TR8-700-70 Datasheet


TR8-700-70
TR8 SERIES
SILICON TRIACS
l 8 A RMS, 70 A Peak
l Glass Passivated Wafer
l 400 V to 800 V Off-State Voltage
l Max IGT of 50 mA (Quadrants 1 - 3)
MT1
MT2
G
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
TR8-400-70
Repetitive peak off-state voltage (see Note 1)
TR8-600-70
TR8-700-70
TR8-800-70
Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2)
Peak on-state surge current full-sine-wave (see Note 3)
Peak on-state surge current half-sine-wave (see Note 4)
Peak gate current
Peak gate power dissipation at (or below) 85°C case temperature (pulse width £ 200 m s)
Average gate power dissipation at (or below) 85°C case temperature (see Note 5)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
SYMBOL
VDRM
IT(RMS)
ITSM
ITSM
IGM
PGM
PG(AV)
TC
Tstg
TL
VALUE
400
600
700
800
8
70
80
±1
2.2
0.9
-40 to +110
-40 to +125
230
UNIT
V
A
A
A
A
W
W
°C
°C
°C
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at
the rate of 320 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
5. This value applies for a maximum averaging time of 20 ms.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
IDRM
Repetitive peak
off-state current
VD = rated VDRM
IGTM
Peak gate trigger
current
VGTM
Peak gate trigger
voltage
Vsupply = +12 V†
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
Vsupply = +12 V†
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
† All voltages are with respect to Main Terminal 1.
TEST CONDITIONS
IG = 0
RL = 10 W
RL = 10 W
RL = 10 W
RL = 10 W
RL = 10 W
RL = 10 W
RL = 10 W
RL = 10 W
TC = 110°C
tp(g) > 20 m s
tp(g) > 20 m s
tp(g) > 20 m s
tp(g) > 20 m s
tp(g) > 20 m s
tp(g) > 20 m s
tp(g) > 20 m s
tp(g) > 20 m s
MIN TYP MAX UNIT
±2
2 50
-12 -50
-9 -50
20
0.7 2
-0.8 -2
-0.8 -2
0.9 2
mA
mA
V

TR8-700-70
TR8 SERIES
SILICON TRIACS
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
VTM
IH
IL
dv/dt
dv/dt(c)
Peak on-state voltage
Holding current
Latching current
Critical rate of rise of
off-state voltage
Critical rise of commu-
tation voltage
ITM = ±12 A
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = +12 V†
Vsupply = -12 V†
VDRM = Rated VDRM
VDRM = Rated VDRM
IG = 50 mA
IG = 0
IG = 0
(see Note 7)
IG = 0
ITRM = ±12 A
(see Note 6)
Init’ ITM = 100 mA
Init’ ITM = -100 mA
TC = 110°C
TC = 85°C
±1.6
5
-9
±2.1
30
-30
50
-50
±100
V
mA
mA
V/µs
±5 V/µs
† All voltages are with respect to Main Terminal 1.
NOTES: 6. This parameter must be measured using pulse techniques, tp = £ 1 ms, duty cycle £ 2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
7. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:
RG = 100 W , tp(g) = 20 m s, tr = £ 15 ns, f = 1 kHz.
thermal characteristics
Rq JC
Rq JA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
1.8 °C/W
62.5 °C/W
1000
100
TYPICAL CHARACTERISTICS
GATE TRIGGER CURRENT
vs
CASE TEMPERATURE
Vsupply IGTM
++
+-
--
-+
VAA = ± 12 V
RL = 10 W
tp(g) = 20 µs
GATE TRIGGER VOLTAGE
vs
CASE TEMPERATURE
10
Vsupply IGTM
++
+-
--
-+
VAA = ± 12 V
RL = 10 W
tp(g) = 20 µs
10 1
1
0·1
-60 -40 -20 0 20 40 60 80 100 120
TC - Case Temperature - °C
Figure 1.
0·1
-60 -40 -20 0 20 40 60 80 100 120
TC - Case Temperature - °C
Figure 2.


Features TR8 SERIES SILICON TRIACS l l l l 8 A RMS, 70 A Peak Glass Passivated Wafer 4 00 V to 800 V Off-State Voltage Max IGT of 50 mA (Quadrants 1 - 3) MT1 MT2 G 1 2 3 TO-220 PACKAGE (TOP VIEW) Pin 2 i s in electrical contact with the mounti ng base. absolute maximum ratings ove r operating case temperature (unless ot herwise noted) RATING TR8-400-70 TR8-60 0-70 TR8-700-70 TR8-800-70 SYMBOL VAL UE 400 600 700 800 8 70 80 ±1 2.2 0.9 -40 to +110 -40 to +125 230 UNIT Repe titive peak off-state voltage (see Note 1) VDRM V Full-cycle RMS on-state c urrent at (or below) 85°C case tempera ture (see Note 2) Peak on-state surge c urrent full-sine-wave (see Note 3) Peak on-state surge current half-sine-wave (see Note 4) Peak gate current Peak gat e power dissipation at (or below) 85°C case temperature (pulse width £ 200 m s) Average gate power dissipation at ( or below) 85°C case temperature (see N ote 5) Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 .
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