TS7992 Output Applications Datasheet

TS7992 Datasheet, PDF, Equivalent


Part Number

TS7992

Description

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

Manufacture

Sanyo Semicon Device

Total Page 3 Pages
Datasheet
Download TS7992 Datasheet


TS7992
Ordering number :EN5961
NPN Triple Diffused Planar Silicon Transistor
TS7992
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
• High speed.
• High breakdown voltage (VCBO=1600V).
• High reliability (Adoption of HVP process).
• Adoption of MBIT process.
Package Dimensions
unit:mm
2039D-TO3PML
[TS7992]
16.0
ø3.4
5.6
3.1
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Colletctor-to-Base Voltage
Colletctor-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25˚ C
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
Collector Cutoff Current
DC Current Gain
C-E Saturation Voltage
B-E Saturation Voltage
Storage Time
Fall Time
Symbol
Conditions
ICES
VCEO(SUS)
IEBO
ICBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
tstg
tf
VCE=1600V, RBE=0
IC=100mA, IB=0
VEB=4V, IC=0
VCB=800V, IE=0
VCE=5V, IC=1.0A
VCE=5V, IC=14A
IC=14A, IB=3.5A
IC=14A, IB=3.5A
IC=12A, IB1=2.0A, IB2=–5.0A
IC=12A, IB1=2.0A, IB2=–5.0A
2.8
2.0
1.0
123
5.45 5.45
2.0
0.6
1:Base
2:Collector
3:Emitter
SANYO:TO-3PML
Ratings
1600
800
6
20
40
3.0
75
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Ratings
min typ
800
15
4
max
1.0
1.0
10
30
7
5
1.5
3.0
0.2
Unit
mA
V
mA
µA
V
V
µs
µs
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42498TS (KOTO) TA-1620 No.5961-1/3

TS7992
Switching Time Test Circuit
TS7992
PW=20µs
DC1%
INPUT
VR
50
IB1
IB2
RB
+
100µF
OUTPUT
+
470µF
RL=16.7
VBE=–2V
VCC=200V
I C - VCE
20
18 5.0A 4.5A 4.0A 3.5A
16 3.0A
14 2.5A
2.0A
12 1.5A
10 1.0A
8 0.5A
6
4
2
IB =0
00 1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE – V
100
hFE - I C
VCE =5V
7
5
3 Ta=120˚C
2 25˚C
10 –40˚C
7
5
3
2
1.0
0.1
2 3 5 7 1.0
2 3 5 7 10
23
Collector Current, IC – A
SW Time - I C
7
5 tstg
3
2
1.0
7
5 tf
3
2
VCC =200V
0.1 IC/IB1=6
7
IB2/IB1=2.5
R load
5
7 0.1 2
3 5 7 1.0 2 3 5 7
Collector Current, IC – A
10
23
20 VCE=5V
18
I C - VBE
16
14
12
10
8
6
4
2
0
0 0.2 0.4 0.6 0.8 1.0
Base-to-Emitter Voltage, VBE – V
10
7
IC /IB =5
5
VCE(sat) - I C
3
2
1.2
1.0
7
5
3
2
0.1 Ta=–40˚C
7
5 120˚C
3
25˚C
2
0.01
0.1
2 3 5 7 1.0
2 3 5 7 10
Collector Current, IC – A
23
SW Time - I B2
10 VCC=200V
7 tstg IC=12A
5 IB1=2A
R load
3
2
1.0 tf
7
5
3
2
0.1
7
7 0.1
2 3 5 7 1.0
2 3 5 7 10
Base Current, IB2 – A
2
No.5961-2/3


Features Ordering number :EN5961 NPN Triple Diff used Planar Silicon Transistor TS7992 Ultrahigh-Definition CRT Display Horizo ntal Deflection Output Applications Fea tures • High speed. • High breakdow n voltage (VCBO=1600V). • High reliab ility (Adoption of HVP process). • Ad option of MBIT process. Package Dimens ions unit:mm 2039D-TO3PML [TS7992] ø3. 4 16.0 5.6 3.1 5.0 8.0 21.0 22.0 4.0 2.8 2.0 2.0 20.4 1.0 0.6 1 2 3 5.45 5.45 1:Base 2:Collector 3:Emitt er SANYO:TO-3PML Specifications Absolu te Maximum Ratings at Ta = 25˚C Parame ter Colletctor-to-Base Voltage Colletct or-to-Emitter Voltage Emitter-to-Base V oltage Collector Current Collector Curr ent (Pulse) Collector Dissipation Junct ion Temperature Storage Temperature Sym bol VCBO VCEO VEBO IC ICP PC Tc=25˚ C Tj Tstg Conditions Ratings 1600 800 6 2 0 40 3.0 75 150 –55 to +150 Unit V V V A A W W ˚C ˚C Electrical Character istics at Ta = 25˚C Parameter Collecto r Cutoff Current Collector Sustain Voltage Emitter Cutoff Current Collector Cut.
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