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TS7992

Sanyo Semicon Device

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

Ordering number :EN5961 NPN Triple Diffused Planar Silicon Transistor TS7992 Ultrahigh-Definition CRT Display Horizont...



TS7992

Sanyo Semicon Device


Octopart Stock #: O-307620

Findchips Stock #: 307620-F

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Description
Ordering number :EN5961 NPN Triple Diffused Planar Silicon Transistor TS7992 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features High speed. High breakdown voltage (VCBO=1600V). High reliability (Adoption of HVP process). Adoption of MBIT process. Package Dimensions unit:mm 2039D-TO3PML [TS7992] ø3.4 16.0 5.6 3.1 5.0 8.0 21.0 22.0 4.0 2.8 2.0 2.0 20.4 1.0 0.6 1 2 3 5.45 5.45 1:Base 2:Collector 3:Emitter SANYO:TO-3PML Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Colletctor-to-Base Voltage Colletctor-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tc=25˚ C Tj Tstg Conditions Ratings 1600 800 6 20 40 3.0 75 150 –55 to +150 Unit V V V A A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current Collector Cutoff Current DC Current Gain C-E Saturation Voltage B-E Saturation Voltage Storage Time Fall Time Symbol ICES VCE=1600V, RBE=0 VCEO(SUS) IC=100mA, IB=0 IEBO VEB=4V, IC=0 ICBO hFE(1) hFE(2) VCE(sat) VBE(sat) tstg tf VCB=800V, IE=0 VCE=5V, IC=1.0A VCE=5V, IC=14A IC=14A, IB=3.5A IC=14A, IB=3.5A IC=12A, IB1=2.0A, IB2=–5.0A IC=12A, IB1=2.0A, IB2=–5.0A 15 4 Conditions Ratings min 800 1.0 10 30 7 5 1.5 3.0 0.2 V V µs µs typ max 1.0 Unit mA V mA µA SANYO Electric Co.,Ltd. Semiconductor Bussiness Headqua...




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