TS7994

Ordering number :EN5962 NPN Triple Diffused Planar Silicon Transistor TS7994 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features High speed. High breakdown voltage (VCBO=1600V). High reliability (Adoption of HVP process). Adoption of MBIT process. Package Dimensions unit:mm 2048B-TO3PBL [TS7994] 6.0 20.0 ø3.3 5.0 26.0 2.0 3.4 20.7 2.0 1.0 0.6 1.2 5.45 5.45 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Colletctor-to-Base Voltage Colletctor-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tc=25˚ C Tj Tstg Conditions Ratings 1600 800 6 25 50 3.5 210 150 –55 to +150 Unit V V V A A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current Collector Cutoff Current DC Current Gain C-E Saturation Voltage B-E Saturation Voltage Storage Time Fall Time Symbol ICES VCE=1600V, RBE=0 VCEO(SUS) IC=100mA, IB=0 IEBO VEB=4V, IC=0 ICBO hFE(1) hFE(2) VCE(sat) VBE(sat) tstg tf VCB=800V, IE=0 VCE=5V, IC=1.0A VCE=5V, IC=18A IC=18A, IB=4.5A IC=18A, IB=4.5A IC=15A, IB1=2.5A, IB2=–6.25A IC=15A, IB1=2.5A, IB2=–6.25A 15 4 Conditions Ratings min 800 1.0 10 30 7 5 1.5 3.0 0.2 V V µs µs typ max 1.0 Unit mA V mA µA SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku,...