TS7994 Silicon Transistor Datasheet

TS7994 Datasheet, PDF, Equivalent


Part Number

TS7994

Description

NPN Triple Diffused Planar Silicon Transistor

Manufacture

Sanyo Semicon Device

Total Page 3 Pages
Datasheet
Download TS7994 Datasheet


TS7994
Ordering number :EN5962
NPN Triple Diffused Planar Silicon Transistor
TS7994
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
• High speed.
• High breakdown voltage (VCBO=1600V).
• High reliability (Adoption of HVP process).
• Adoption of MBIT process.
Package Dimensions
unit:mm
2048B-TO3PBL
[TS7994]
20.0 ø3.3
5.0
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Colletctor-to-Base Voltage
Colletctor-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25˚ C
Electrical Characteristics at Ta = 25˚C
2.0
3.4
1.2
1 23
5.45 5.45
0.6
1:Base
2:Collector
3:Emitter
SANYO:TO-3PBL
Conditions
Ratings
1600
800
6
25
50
3.5
210
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Parameter
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
Collector Cutoff Current
DC Current Gain
C-E Saturation Voltage
B-E Saturation Voltage
Storage Time
Fall Time
Symbol
Conditions
ICES
VCEO(SUS)
IEBO
ICBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
tstg
tf
VCE=1600V, RBE=0
IC=100mA, IB=0
VEB=4V, IC=0
VCB=800V, IE=0
VCE=5V, IC=1.0A
VCE=5V, IC=18A
IC=18A, IB=4.5A
IC=18A, IB=4.5A
IC=15A, IB1=2.5A, IB2=–6.25A
IC=15A, IB1=2.5A, IB2=–6.25A
Ratings
min typ
800
15
4
max
1.0
1.0
10
30
7
5
1.5
3.0
0.2
Unit
mA
V
mA
µA
V
V
µs
µs
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42498TS (KOTO) TA-1622 No.5962-1/3

TS7994
Switching Time Test Circuit
TS7994
PW=20µs
DC1%
INPUT
VR
50
IB1
IB2
RB
+
100µF
OUTPUT
+
470µF
RL=13.3
VBE=–2V
VCC=200V
I C - VCE
30
10.0A
8.0A
25 6.0A
5.0A
20 4.0A
3.0A
15 2.0A
1.0A
10
0.5A
5
IB =0
00 1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE – V
100
7
5
3 Ta=120˚C
2 25˚C
hFE - I C
VCE =5V
–40˚C
10
7
5
3
2
1.0
0.1
2 3 5 7 1.0
2 3 5 7 10
23 5
Collector Current, IC – A
10 SW Time - I C
7
5 tstg
3
2
1.0
7
5 tf
3
2
VCC =200V
0.1 IC/ IB1=6
7
5
IB2/ IB1=2.5
R load
7 0.1 2 3
5 7 1.0 2 3 5 7 10
Collector Current, IC – A
23 5
25 VCE=5V
20
I C - VBE
15
10
5
0
0 0.2 0.4 0.6 0.8 1.0
Base-to-Emitter Voltage, VBE – V
10
7
IC/ IB=5
5
VCE(sat) - I C
3
2
1.2
1.0
7
5
3
2
0.1 Ta=–40˚C
7
5 120˚C
25˚C
3
2
0.01
0.1
2 3 5 7 1.0 2 3 5 7 10 2 3
Collector Current, IC – A
5 7 100
SW Time - I B2
10
7
tstg
VCC =200V
IC =15A
5 IB1=2.5A
R load
3
2
1.0
7 tf
5
3
2
0.1
7
5
7 0.1
2 3 5 7 1.0 2 3 5 7 10
Base Current, IB2 – A
2
No.5962-2/3


Features Ordering number :EN5962 NPN Triple Diff used Planar Silicon Transistor TS7994 Ultrahigh-Definition CRT Display Horizo ntal Deflection Output Applications Fea tures • High speed. • High breakdow n voltage (VCBO=1600V). • High reliab ility (Adoption of HVP process). • Ad option of MBIT process. Package Dimens ions unit:mm 2048B-TO3PBL [TS7994] 6.0 20.0 ø3.3 5.0 26.0 2.0 3.4 20.7 2.0 1.0 0.6 1.2 5.45 5.45 Specific ations Absolute Maximum Ratings at Ta = 25˚C Parameter Colletctor-to-Base Vol tage Colletctor-to-Emitter Voltage Emit ter-to-Base Voltage Collector Current C ollector Current (Pulse) Collector Diss ipation Junction Temperature Storage Te mperature Symbol VCBO VCEO VEBO IC ICP PC Tc=25˚ C Tj Tstg Conditions Ratings 1600 800 6 25 50 3.5 210 150 –55 to +150 Unit V V V A A W W ˚C ˚C Electr ical Characteristics at Ta = 25˚C Para meter Collector Cutoff Current Collecto r Sustain Voltage Emitter Cutoff Curren t Collector Cutoff Current DC Current Gain C-E Saturation Voltage B-E Saturatio.
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