TN2404KL D-S MOSFET Datasheet

TN2404KL Datasheet, PDF, Equivalent


Part Number

TN2404KL

Description

N-Channel 240 -V (D-S) MOSFET

Manufacture

Vishay Siliconix

Total Page 5 Pages
Datasheet
Download TN2404KL Datasheet


TN2404KL
TN2404K/TN2404KL/BS107KL
Vishay Siliconix
N-Channel 240 -V (D-S) MOSFET
PRODUCT SUMMARY
Part Number
TN2404K
TN2404KL/BS107KL
VDS Min (V)
240
rDS(on) (W)
4 @ VGS = 10 V
4 @ VGS = 10 V
VGS(th) (V)
0.8 to 2.0
0.8 to 2.0
ID (A)
0.2
0.3
Qg (Typ)
4.87
FEATURES
D Low On-Resistance: 4 W
D Secondary Breakdown Free: 260 V
D Low Power/Voltage Driven
D Low Input and Output Leakage
D Excellent Thermal Stability
BENEFITS
D Low Offset Voltage
D Full-Voltage Operation
D Easily Driven Without Buffer
D Low Error Voltage
D No High-Temperature
“Run-Away”
APPLICATIONS
D High-Voltage Drivers: Relays, Solenoids,
Lamps, Hammers, Displays,
Transistors, etc.
D Telephone Mute Switches, Ringer Circuits
D Power Supply, Converters
D Motor Control
TO-236
(SOT-23)
TO-226AA
(TO-92)
TO-92-18RM
(TO-18 Lead Form)
G1
S2
3D
Top View
TN2404K
Marking Code: K1ywl
K1 = Part Number Code for TN2404K
y = Year Code
w = Week Code
l = Lot Traceability
S1
G2
D3
Top View
TN2404KL
Device Marking
Front View
“S” TN
2404KL
xxyy
“S” = Siliconix Logo
xxyy = Date Code
D1
G2
S3
Top View
BS107KL
Device Marking
Front View
“S” BS
107KL
xxyy
“S” = Siliconix Logo
xxyy = Date Code
ORDERING INFORMATION
Standard
Part Number
TN2404K-T1
TN2404KL-TR1
BS107KL-TR1
Lead (Pb)-Free
Part Number
TN2404K-T1—E3
TN2404KL-TR1—E3
BS107KL-TR1—E3
Option
With Tape and Reel Folding Option
Spool Option
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
TN2404K
TN2404KL/BS107KL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)
Pulsed Drain Currenta
TA= 25_C
TA= 70_C
Power Dissipation
Thermal Resistance, Junction-to-Ambient
TA= 25_C
TA= 70_C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
PD
RthJA
TJ, Tstg
0.2
0.16
0.8
0.36
0.23
350b
240
"20
55 to 150
0.3
0.25
1.4
0.8
0.51
156
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface mounted on an FR4 board.
Unit
V
A
W
_C/W
_C
Document Number: 72225
S-41761—Rev. B , 04-Oct-04
www.vishay.com
1

TN2404KL
TN2404K/TN2404KL/BS107KL
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter
Symbol
Test Conditions
Min Typa Max Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-Resistanceb
Forward Transconductanceb
Diode Forward Voltage
Dynamica
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VGS = 0 V, ID = 100 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 192 V, VGS = 0 V
TJ = 55_C
VDS = 10 V, VGS =10 V
VDS = 10 V, VGS = 4.5 V
VGS = 10 V, ID = 0.3 A
VGS = 4.5 V, ID = 0.2 A
VGS = 2.5 V, ID = 0.1 A
VDS = 10 V, ID = 0.3 A
IS = 0.3 A, VGS = 0 V
240
0.8
0.8
0.5
257
1.65
2.2
2.3
2.4
1.6
0.8
2.0
"100
1
10
4
4
6
1.2
V
nA
mA
A
W
S
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
turn-Off Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tr
Notes
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW v300 ms duty cycle v2%.
VDS = 192 V, VGS = 10 V, ID = 0.5 A
VDD = 60 V, RL = 200 W
ID ] 0.3 A, VGEN = 10 V, RG = 25 W
4.87
8
0.56
nC
1.53
5 10
12 20
nS
35 60
16 25
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 72225
S-41761—Rev. B , 04-Oct-04


Features TN2404K/TN2404KL/BS107KL Vishay Siliconi x N-Channel 240 -V (D-S) MOSFET PRODUC T SUMMARY Part Number TN2404K TN2404KL/ BS107KL VDS Min (V) 240 rDS(on) (W) 4 @ VGS = 10 V 4 @ VGS = 10 V VGS(th) ( V) 0.8 to 2.0 0.8 to 2.0 ID (A) 0.2 0. 3 Qg (Typ) 4 87 4.87 FEATURES D D D D D Low On-Resistance: 4 W Secondary Bre akdown Free: 260 V Low Power/Voltage Dr iven Low Input and Output Leakage Excel lent Thermal Stability BENEFITS D D D D D Low Offset Voltage Full-Voltage Ope ration Easily Driven Without Buffer Low Error Voltage No High-Temperature “R un-Away” TO-226AA (TO-92) S 3 D G 2 1 APPLICATIONS D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Disp lays, Transistors, etc. D Telephone Mut e Switches, Ringer Circuits D Power Sup ply, Converters D Motor Control TO-92-1 8RM (TO-18 Lead Form) Device Marking Fr ont View “S” TN 2404KL xxyy “S” = Siliconix Logo xxyy = Date Code D 1 TO-236 (SOT-23) G 1 Device Marking Front View “S” BS 107KL xxyy “S” = Siliconix Logo xxyy = Date Code S 2 G.
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