TN2535 DMOS FETs Datasheet

TN2535 Datasheet, PDF, Equivalent


Part Number

TN2535

Description

N-Channel Enhancement-Mode Vertical DMOS FETs

Manufacture

Supertex Inc

Total Page 4 Pages
Datasheet
Download TN2535 Datasheet


TN2535
TN2535
Low Threshold
New Product
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BVDSS /
BVDGS
RDS(ON)
(max)
VGS(th)
(max)
ID(ON)
(min)
350V
102.0V
1.0A
* Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
Order Number / Package
TO-243AA*
TN2535N8
Features
Low threshold
High input impedance
Low input capacitance — 125pF max.
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Applications
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Product marking for TO-243AA
TN5S
Where = 2-week alpha date code
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Package Option
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
* Distance of 1.6 mm from case for 10 seconds.
BVDSS
BVDGS
± 20V
-55°C to +150°C
300°C
D
G
D
S
TO-243AA
(SOT-89)
Note: See Package Outline section for dimensions.
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex prod1ucts, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

TN2535
Thermal Characteristics
Package
TO-243AA
ID (continuous)*
283mA
ID (pulsed)
1.6A
Power Dissipation
@ TA = 25°C
1.6W
θjc
°C/W
15
* ID (continuous) is limited by max rated Tj.
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.
θja
°C/W
78
IDR*
283mA
TN2535
IDRM
1.6A
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
Parameter
Min Typ Max Unit
BVDSS
VGS(th)
VGS(th)
IGSS
IDSS
ID(ON)
Gate Threshold Voltage
Change in VGS(th) with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
ON-State Drain Current
350
1.0
0.5
1.0
V
2.0 V
-4.0 mV/°C
100 nA
1.0 µA
A
RDS(ON)
Static Drain-to-Source
ON-State Resistance
15
10
10
RDS(ON)
GFS
CISS
COSS
CRSS
td(ON)
tr
td(OFF)
tf
VSD
trr
Change in RDS(ON) with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
0.75 %/°C
125 m
125
70 pF
25
20
15
25 ns
20
1.8 V
300 ns
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Conditions
VGS = 0V, ID = 250µA
VGS = VDS, ID= 1mA
VGS = VDS, ID= 1mA
VGS = ± 20V, VDS = 0V
VGS = 0V, VDS = Max Rating
VGS = 4.5V, VDS = 25V
VGS = 10V, VDS = 25V
VGS = 3.0V, ID = 20mA
VGS = 4.5V, ID = 100mA
VGS = 10V, ID = 200mA
VGS = 10V, ID = 200mA
VDS = 25V, ID = 100mA
VDD = 25V,
ID = 200mA,
RGEN = 25
VGS = 0V, ISD = 200mA
VGS = 0V, ISD = 200mA
Switching Waveforms and Test Circuit
VDD
10V
INPUT
0V
10%
VDD
OUTPUT
0V
t(ON)
td(ON)
tr
10%
90%
90%
t(OFF)
td(OFF)
tF
10%
90%
2
PULSE
GENERATOR
Rgen
INPUT
RL
OUTPUT
D.U.T.


Features TN2535 Low Threshold New Product N-Chan nel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 350 V * Same as SOT-89. RDS(ON) (max) 10Ω VGS(th) (max) 2.0V ID(ON) (min) 1.0A O rder Number / Package TO-243AA* TN2535N 8 Product supplied on 2000 piece carri er tape reels. Features ❏ Low thresh old ❏ High input impedance ❏ Low in put capacitance — 125pF max. ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage Product m arking for TO-243AA TN5S❋ Where ❋ = 2-week alpha date code Low Threshold DMOS Technology These low threshold en hancement-mode (normally-off) transisto rs utilize a vertical DMOS structure an d Supertex's well-proven silicon-gate m anufacturing process. This combination produces devices with the power handlin g capabilities of bipolar transistors a nd with the high input impedance and po sitive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from th.
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