TN2540-G

® TN2540-G SCR FEATURES HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY DESCRIPTION The TN2540 series of Silicon Controlled Rectifiers uses a high performance glass passivated technology. This SCR is designed for power supplies up to 400Hz on resistive or inductive load. A A K G D2PAK ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) IT(AV) ITSM Parameter RMS on-state current (180° conduction angle) Average on-state current (180° conduction angle) Non repetitive surge peak on-state current (Tj initial = 25°C) I2t dI/dt Tstg Tj Tl I2t Value for fusing Critical rate of rise of on-state current dIG /dt = 1 A/µs. IG = 100 mA Storage junction temperature range Operating junction temperature range Maximum temperature for soldering during 10s Tc= 100°C Tc= 100°C tp = 8.3 ms tp = 10 ms tp = 10ms Value 25 16 314 300 450 100 - 40 to + 150 - 40 to + 125 260 A2s A/µs °C °C Unit A A A Symbol VDRM VRRM Parameter Repetitive peak off-state voltage Tj = 125°C TN2540600G 600 800G 800 Unit V May 1998 - Ed: 5 1/5 TN2540-G THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Parameter Junction to ambient (S=1cm2) Junction to case for D.C Value 45 1.0 Unit °C/W °C/W GATE CHARACTERISTICS PG (AV)= 1W PGM = 10 W (tp = 20 µs) ELECTRICAL CHARACTERISTICS Symbol IGT Test Conditions VD = 12V (DC) RL= 33Ω Tj= 25°C Type MIN MAX VGT VGD IH IL VTM IDRM IRRM dV/dt VD = 12V (DC) RL= 33Ω VD = VDRM RL = 3.3kΩ IT= 200mA IG = 1.2 IGT ITM= 50A tp= 380µs VD = VDRM VR = VRRM VD=67%VDRM Gate open...