TN3440A Purpose Amplifier Datasheet

TN3440A Datasheet, PDF, Equivalent


Part Number

TN3440A

Description

NPN General Purpose Amplifier

Manufacture

Fairchild Semiconductor

Total Page 4 Pages
Datasheet
Download TN3440A Datasheet


TN3440A
TN3440A
Discrete POWER & Signal
Technologies
C
BE
TO-226
NPN General Purpose Amplifier
This device is designed for use in horizontal driver, class A off-line
amplifier and off-line switching applications. Sourced from Process 36.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
VCEO
VCBO
VEBO
IC
TJ, Tstg
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Value
250
300
7.0
100
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
Max
TN3440A
1.0
8.0
125
50
Units
V
V
V
mA
°C
Units
W
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation

TN3440A
Electrical Characteristics
Symbol
Parameter
NPN General Purpose Amplifier
(continued)
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
VCEO(sus )
V(BR)CBO
Collector-Emitter Sustaining Voltage*
Collector-Base Breakdown Voltage
ICEO Collector-Cutoff Current
ICEX Collector-Cutoff Current
ICBO Collector-Cutoff Current
IEBO Emitter-Cutoff Current
IC = 50 mA, IB = 0
IC = 100 µA, IE = 0
VCE = 200 V, IB = 0
VCE = 300 V, VBE = 1.5 V
VCB = 250 V, IE = 0
VEB = 5.0 V, IC = 0
250
300
50
500
20
20
V
V
µA
µA
µA
µA
ON CHARACTERISTICS
hFE DC Current Gain
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = 2.0 mA, VCE = 10 V
IC = 20 mA, VCE = 10 V
IC = 50 mA, IB = 4.0 mA
IC = 50 mA, IB = 4.0 mA
SMALL SIGNAL CHARACTERISTICS
fT Current Gain - Bandwidth Product
Cobo
Cibo
hfe
Output Capacitance
Input Capacitance
Small-Signal Current Gain
*Pulse Test: Pulse Width 300 µs, Duty Cycle 1.0%
IC = 10 mA, VCE = 10 V,
f = 5.0 MHz
VCB = 10 V, IE = 0, f = 1.0 MHz
VBE = 5.0 V, IC = 0, f = 1.0 MHz
IC = 5.0 mA, VCE = 10 V,
f = 1.0 kHz
30
40
15
25
160
0.5 V
1.3 V
MHz
10 pF
95 pF
DC Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
1000
100
25 °C
125 °C
V CE = 5V
- 40 ºC
10
1
0.001
0.01
0.1
I C - COLLECTOR CURRENT (A)
P 36
1
Collector-Emitter Saturation
Voltage vs Collector Current
0.3
β = 10
125 °C
0.2
25 °C
0.1
- 40 ºC
1 10 100 1000
I C - COLLECTOR CURRENT (mA)
P 36


Features TN3440A Discrete POWER & Signal Technol ogies TN3440A C TO-226 BE NPN Gener al Purpose Amplifier This device is des igned for use in horizontal driver, cla ss A off-line amplifier and off-line sw itching applications. Sourced from Proc ess 36. Absolute Maximum Ratings* Symb ol VCEO VCBO VEBO IC TJ, Tstg Collector -Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherw ise noted Parameter Value 250 300 7.0 100 -55 to +150 Units V V V mA °C O perating and Storage Junction Temperatu re Range *These ratings are limiting v alues above which the serviceability of any semiconductor device may be impair ed. NOTES: 1) These ratings are based o n a maximum junction temperature of 150 degrees C. 2) These are steady state l imits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Charac teristics Symbol PD RθJC RθJA TA = 2 5°C unless otherwise noted Characteristic Total Device Dissipation.
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