TN3467A Switching Transistor Datasheet

TN3467A Datasheet, PDF, Equivalent


Part Number

TN3467A

Description

PNP Switching Transistor

Manufacture

Fairchild Semiconductor

Total Page 6 Pages
Datasheet
Download TN3467A Datasheet


TN3467A
Discrete POWER & Signal
Technologies
TN3467A
C
BE
TO-226
MMPQ3467
BE B
BE
E
B
E CC
C
CC
C
C
C
SOIC-16
PNP Switching Transistor
This device is designed for high speed saturated switching applications
at currents to 800 mA. Sourced from Process 70.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
40
VCBO
Collector-Base Voltage
40
VEBO
Emitter-Base Voltage
5.0
IC Collector Current - Continuous
1.2
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
A
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
Max
TN3467A
1.0
8.0
50
125
MMPQ3467
1.0
8.0
125
240
Units
W
mW/°C
°C/W
°C/W
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation

TN3467A
Electrical Characteristics
Symbol
Parameter
PNP Switching Transistor
(continued)
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 0
40
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10 µA, IE = 0
40 V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10 µA, IC = 0
5.0 V
IBEV Base-Cutoff Current
VCE = 30 V, VBE = 3.0 V
120 nA
ICEX Collector-Cutoff Current
VCE = 30 V, VBE = 3.0 V
100 nA
ICBO Collector-Cutoff Current
VCB = 30 V, IE = 0
VCB = 30 V, IE = 0, TA = 150°C
0.01 µA
15 µA
ON CHARACTERISTICS*
hFE DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
IC = 150 mA, VCE = 1.0 V
IC = 500 mA, VCE = 1.0 V
IC = 1.0 A, VCE = 5.0 V
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
IC = 1.0 A, IB = 100 mA
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
IC = 1.0 A, IB = 100 mA
40
40 120
40
0.3
0.5
1.0
1.0
1.2
0.8 1.6
V
V
V
V
V
V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain-Bandwidth Product
IC = 50 mA, VCE = 10 V,
f = 100 MHz
175
MHz
Cobo
Output Capacitance
VCB = 10 V, IE = 0, f = 1.0 KHz
25 pF
Cibo Input Capacitance
VBE = 0.5 V, IC = 0, f = 1.0 KHz
100 pF
SWITCHING CHARACTERISTICS (except for MMPQ3467)
td Delay Time
tr Rise Time
ts Storage Time
tf Fall Time
VCC = 30 V, VBE = 2.0 V,
IC = 500 mA, IB1 = 50 mA
VCC = 30 V, IC = 500 mA,
IB1 = IB2 = 50 mA
*Pulse Test: Pulse Width 300 µs, Duty Cycle 1.0%
10 ns
30 ns
60 ns
30 ns


Features TN3467A / MMPQ3467 Discrete POWER & Sig nal Technologies TN3467A MMPQ3467 E B E B E B E B C TO-226 B E SOIC-16 C C C C C C C C PNP Switching Transistor This device is designed for high speed saturated switching applicat ions at currents to 800 mA. Sourced fro m Process 70. Absolute Maximum Ratings * Symbol VCEO VCBO VEBO IC TJ, Tstg Col lector-Emitter Voltage Collector-Base V oltage Emitter-Base Voltage Collector C urrent - Continuous TA = 25°C unless otherwise noted Parameter Value 40 40 5.0 1.2 -55 to +150 Units V V V A °C Operating and Storage Junction Temper ature Range *These ratings are limitin g values above which the serviceability of any semiconductor device may be imp aired. NOTES: 1) These ratings are base d on a maximum junction temperature of 150 degrees C. 2) These are steady stat e limits. The factory should be consult ed on applications involving pulsed or low duty cycle operations. Thermal Cha racteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise note.
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