TN5335

Supertex inc. TN5335 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► Low threshold ►► High input impedance ►► Low input capacitance ►► Fast switching speeds ►► Low on-resistance ►► Free from secondary breakdown ►► Low input and output leakage ►► Complementary N- and P-channel devices Applications ►► Logic level interfaces - ideal for TTL and CMOS ►► Solid state relays ►► Battery operated systems ►► Photo voltaic drives ►► Analog switches ►► General purpose line drivers ►► Telecom switches General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Ordering Information Product Summary Part Number TN5335K1-G TN5335N8-G Package Option TO-236AB (SOT-23) TO-243AA (SOT-89) Packing 3000/Reel 2000/Reel BVDSS/BVDGS 350V RDS(ON) (max) 15Ω ID(ON) (min) 750mA VGS(th) (max) 2.0V -G denotes a lead (Pb)...