Voltage Amplifier. TN5415A Datasheet


TN5415A Amplifier. Datasheet pdf. Equivalent


TN5415A


PNP High Voltage Amplifier
TN5415A

Discrete POWER & Signal Technologies

TN5415A

C

TO-226
BE

PNP High Voltage Amplifier
This device is designed for use as high voltage drivers requiring collector currents to 100 mA. Sourced from Process 76. See MPSA92 for characteristics.

Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

TA = 25°C unless otherwise noted

Parameter

Value
200 200 4.0 100 -55 to +150

Units
V V V mA °C

Operating and Storage Junction Temperature Range

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RθJC RθJA

TA = 25°C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient

Max
TN5415A 1.0 8.0 125 50

Units
W mW/ °C °C/W °C/W

© 1997 Fairchild Semiconductor Corporation

TN5415A

PNP High Voltage Amplifier
(continued)

Electrical Characteristics
Symbol Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min

Max

Units

OFF CHARACTERISTICS
V(BR)CEO V(BR)CB...



TN5415A
TN5415A
Discrete POWER & Signal
Technologies
C
BE
TO-226
PNP High Voltage Amplifier
This device is designed for use as high voltage drivers requiring
collector currents to 100 mA. Sourced from Process 76. See
MPSA92 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
200
VCBO
Collector-Base Voltage
200
VEBO
Emitter-Base Voltage
4.0
IC
TJ, Tstg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
100
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
Max
TN5415A
1.0
8.0
125
50
Units
V
V
V
mA
°C
Units
W
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation

TN5415A
PNP High Voltage Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
IC = 50 mA, IB = 0
IC = 100 µA, IE = 0
IE = 100 µA, IC = 0
200
200
4.0
ICBO Collector Cutoff Current
VCB = 175 V
50
ICEX Collector Cutoff Current
ICEO Collector Cutoff Current
VCE = 200 V, VBE = 1.5 V (rev)
VCE = 150 V
50
50
IEBO Emitter Cutoff Current
VEB = 4.0 V, IC = 0
20
V
V
V
µA
µA
µA
µA
ON CHARACTERISTICS*
hFE DC Current Gain
VCE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
VCE = 10 V, IC = 50 mA
IC = 50 mA, IB = 5.0 mA
IC = 50 mA, VCE = 10 V
SMALL SIGNAL CHARACTERISTICS
Cob Output Capacitance
Cib Input Capacitance
hfe Small-Signal Current Gain
Re(hie)
IS /b
Input Resistance
Safe Operating Area
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
VCB = 10 V, f = 1.0 MHz
VEB = 5.0 V, f = 1.0 MHz
IC = 5.0 mA, VCE = 10 V,
f = 5.0 MHz
IC = 5.0 mA, VCE = 10 V,
f = 1.0 kHz
VCE = 10 V, IC = 5.0 mA
VCE = 100 V, t = 100 mS
30 150
2.5
1.5
V
V
15 pF
75 pF
3.0
25
300
100 mA




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