Amplifier. TN6707A Datasheet

TN6707A Amplifier. Datasheet pdf. Equivalent


Part Number

TN6707A

Description

NPN General Purpose Amplifier

Manufacture

Fairchild Semiconductor

Total Page 3 Pages
Datasheet
Download TN6707A Datasheet


TN6707A
TN6707A
NPN General Purpose Amplifier
• These devices is designed for general purpose medium power
amplifiers and switches requiring collector currents to 1.0A
• Sourced from process 39.
CBE TO-226
Absolute Maximum Ratings* TA=25°C unless otherwise noted
Symbol
Parameter
FPN660
VCEO
Collector-Emitter Voltage
80
VCBO
Collector-Base Voltage
100
VEBO
Emitter-Base Voltage
5.0
IC Collector Current - Continuous
1.2
TJ, TSTG Operating and Storage Junction Temperature Range
-55 ~ +150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
A
°C
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage *
V(BR)CBO Collector-Base Breakdown Voltage
V(BR)EBO Emitter-Base Breakdown Voltage
ICBO
Collector-Base Cutoff Current
IEBO
Emitter-Base Cutoff Current
On Characteristics *
IC = 10mA, IB = 0
IE = 100µA, IE = 0
IE = 1.0mA, IC = 0
VCB = 80V, IE = 0
VEB = 5.0V, IC = 0
hFE DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage
VBE(on) Base-Emitter On Voltage
Small Signal Characteristics
VCE = 2.0V, IC = 50mA
VCE = 2.0V, IC = 250mA
VCE = 2.0V, IC = 500mA
IC = 500mA, IB = 50mA
IC = 1.0A, IB = 100mA
VCE = 2.0V, IC = 1.0A
hfe Output Capacitance
fT Current Gain Bandwidth Product
* Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%
VCE = 5.0V, IC = 200mA, f = 20MHz
VCE = 5.0V, IC = 50mA, f = 20MHz
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
PD Total Device Dissipation
Derate above 25°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
1.0
8.0
50
125
Min.
80
100
5.0
40
40
25
2.5
50
Max. Units
V
V
V
0.1 µA
0.1 µA
250
0.5 V
1.0 V
1.5 V
20 MHz
MHz
Units
W
mW/°C
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, January 2003

TN6707A
Package Dimensions
TO-226
S4.70-4.32;
S7.87-7.37;
S0.76-
0.36;
S15.61-14.47;
S1.65-1.27;
0.51
S1.52-1.02;
2" TYP
S7.73-7.10;
2" TYP
S0.51-0.36;
S1.40-1.14;
S1.40-1.14;
S4.45-3.81;
1 23
5" TYP
S2.41-2.13;
S0.48-0.30;
99 95
1EE
2BC
3CB
TO-226AE (95,99)
For leadformed option ordering,
refer to Tape & Reel data information.
©2003 Fairchild Semiconductor Corporation
Dimensions in Millimeters
Rev. A, January 2003


Features TN6707A TN6707A NPN General Purpose Amp lifier • These devices is designed fo r general purpose medium power amplifie rs and switches requiring collector cur rents to 1.0A • Sourced from process 39. C BE TO-226 Absolute Maximum Rati ngs* TA=25°C unless otherwise noted Sy mbol VCEO VCBO VEBO IC TJ, TSTG Paramet er Collector-Emitter Voltage Collector- Base Voltage Emitter-Base Voltage Colle ctor Current - Continuous Operating and Storage Junction Temperature Range FPN 660 80 100 5.0 1.2 -55 ~ +150 Units V V V A °C * These ratings are limiting values above which the serviceability o f any semiconductor device may be impai red. NOTES: 1) These ratings are based on a maximum junction temperature of 15 0°C. 2) These are steady state limits. The factory should be consulted on app lications involving pulsed or low duty cycle operations. Electrical Character istics TA=25°C unless otherwise noted Symbol Off Characteristics V(BR)CEO V(B R)CBO V(BR)EBO ICBO IEBO hFE Parameter Test Conditions IC = 10mA, IB = .
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