Purpose Amplifier. TN6714A Datasheet


TN6714A Amplifier. Datasheet pdf. Equivalent


Part Number

TN6714A

Description

NPN General Purpose Amplifier

Manufacture

Fairchild Semiconductor

Total Page 4 Pages
Datasheet
Download TN6714A Datasheet


TN6714A
Discrete POWER & Signal
Technologies
TN6714A
NZT6714
C
C
BE
TO-226
SOT-223
E
C
B
NPN General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 1.5 A.
Sourced from Process 37.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
30
VCBO
Collector-Base Voltage
40
VEBO
Emitter-Base Voltage
5.0
IC Collector Current - Continuous
2.0
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
A
°C
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
TN6714A
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
1.0
8.0
50
RθJA Thermal Resistance, Junction to Ambient
125
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
*NZ T6714
1.0
8.0
125
Units
W
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation

TN6714A
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA= 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
V(BR)CBO
V(BR)EBO
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
ICBO Collector-Cutoff Current
IEBO Emitter-Cutoff Current
IC = 10 mA, IB = 0
IC = 100 µA, IE = 0
IE = 100 µA, IC = 0
VCB = 40 V, IE = 0
VEB = 5.0 V, IC = 0
30 V
40 V
5.0 V
0.1 µA
0.1 µA
ON CHARACTERISTICS
hFE DC Current Gain
VCE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 10 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
IC = 1.0 A, VCE = 1.0 V
IC = 1.0 A, IB = 100 mA
IC = 1.0 A, VCE = 1.0 V
55
60
50 250
0.5
1.2
V
V
SMALL SIGNAL CHARACTERISTICS
hfe Small-Signal Current Gain
Ccb Collector-Base Capacitance
IC = 50 mA, VCE = 10 V,
f = 20 MHz
2.5 25
VCB = 10 mA, IE = 0, f = 1.0 MHz
30 pF
*Pulse Test: Pulse Width 300 µs, Duty Cycle 1.0%
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
500
V CE = 5V
400
125 °C
300
25 °C
200
- 40 ºC
100
0
0.001
0.01 0.1
I C - COLLECTOR CURRENT (A)
1
Collector-Emitter Saturation
Voltage vs Collector Current
1
β = 10
0.1
0.01
125 ºC
25 °C
- 40 ºC
0.01
0.1
I C - COLLECTOR CURRENT (A)
P3
1


Features TN6714A / NZT6714 Discrete POWER & Sign al Technologies TN6714A NZT6714 C E C C TO-226 BE B SOT-223 NPN General Purpose Amplifier This device is desig ned for general purpose medium power am plifiers and switches requiring collect or currents to 1.5 A. Sourced from Proc ess 37. Absolute Maximum Ratings* Symb ol VCEO VCBO VEBO IC TJ, Tstg Collector -Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherw ise noted Parameter Value 30 40 5.0 2 .0 -55 to +150 Units V V V A °C Oper ating and Storage Junction Temperature Range *These ratings are limiting valu es above which the serviceability of an y semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 de grees C. 2) These are steady state limi ts. The factory should be consulted on applications involving pulsed or low du ty cycle operations. Thermal Character istics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Cha.
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