TN6715A Purpose Amplifier Datasheet

TN6715A Datasheet, PDF, Equivalent


Part Number

TN6715A

Description

NPN General Purpose Amplifier

Manufacture

Fairchild Semiconductor

Total Page 4 Pages
Datasheet
Download TN6715A Datasheet


TN6715A
Discrete POWER & Signal
Technologies
TN6715A
NZT6715
C
C
BE
TO-226
SOT-223
E
C
B
NPN General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 1.2 A.
Sourced from Process 38.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
VCBO
Collector-Emitter Voltage
Collector-Base Voltage
40
50
VEBO
Emitter-Base Voltage
5.0
IC Collector Current - Continuous
1.5
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
A
°C
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
TN6715A
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
1.0
8.0
50
RθJA Thermal Resistance, Junction to Ambient
125
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
*NZ T6715
1.0
8.0
125
Units
W
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation

TN6715A
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
V(BR)CBO
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
ICBO Collector-Cutoff Current
IEBO Emitter-Cutoff Current
IC = 10 mA, IB = 0
IC = 100 µA, IE = 0
IE = 100 µA, IC = 0
VCB = 50 V, IE = 0
VEB = 5.0 V, IC = 0
40 V
50 V
5.0 V
0.1 µA
0.1 µA
ON CHARACTERISTICS
hFE DC Current Gain
VCE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 10 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
IC = 1.0 A, VCE = 1.0 V
IC = 1.0 A, IB = 100 mA
IC = 1.0 A, VCE = 1.0 V
55
60
50 250
0.5
1.2
V
V
SMALL SIGNAL CHARACTERISTICS
hfe Small-Signal Current Gain
Ccb Collector-Base Capacitance
IC = 50 mA, VCE = 10 V,
f = 20 MHz
2.5 20
VCB = 10 V, IE = 0, f = 1.0 MHz
30 pF
*Pulse Test: Pulse Width 300 µs, Duty Cycle 1.0%
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
500
V CE = 5V
400
300
200
- 40 ºC
100
25 °C
125 °C
0
0.001
0.01 0.1
12
I C - COLLECTOR CURRENT (A)
Collector-Emitter Saturation
Voltage vs Collector Current
0.6
β = 10
0.5
0.4 125 ºC
0.3 25°C
0.2
0.1 - 40 ºC
0
0.01
0.1 1
I C - COLLECTOR CURRENT (A)
P 38
3


Features TN6715A / NZT6715 Discrete POWER & Sign al Technologies TN6715A NZT6715 C E C C TO-226 B E B SOT-223 NPN Genera l Purpose Amplifier This device is desi gned for general purpose medium power a mplifiers and switches requiring collec tor currents to 1.2 A. Sourced from Pro cess 38. Absolute Maximum Ratings* Sym bol VCEO VCBO VEBO IC TJ, Tstg Collecto r-Emitter Voltage Collector-Base Voltag e Emitter-Base Voltage Collector Curren t - Continuous TA = 25°C unless other wise noted Parameter Value 40 50 5.0 1.5 -55 to +150 Units V V V A °C Ope rating and Storage Junction Temperature Range *These ratings are limiting val ues above which the serviceability of a ny semiconductor device may be impaired . NOTES: 1) These ratings are based on a maximum junction temperature of 150 d egrees C. 2) These are steady state lim its. The factory should be consulted on applications involving pulsed or low d uty cycle operations. Thermal Characte ristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Ch.
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