TN6718A Purpose Amplifier Datasheet

TN6718A Datasheet, PDF, Equivalent


Part Number

TN6718A

Description

NPN General Purpose Amplifier

Manufacture

Fairchild Semiconductor

Total Page 3 Pages
Datasheet
Download TN6718A Datasheet


TN6718A
TN6718A
CBE
TO-226
NPN General Purpose Amplifier
This device is designed for general purpose medium power amplifiers and switches requiring collector currents
to 1.0A. Sourced from Process 39. See TN6717A for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
100
VCBO
VEBO
Collector-Base Voltage
Emitter-Base Voltage
100
5
IC
TJ, Tstg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
1.2
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Units
V
V
V
A
°C
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD
RθJC
RθJA
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
TN6718A
1
8
50
125
Units
W
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor
tn6718a.lwp Rev A

TN6718A
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
BVCEO Collector-Emitter Breakdown Voltage
BVCBO Collector-Base Breakdown Voltage
BVEBO Emitter-Base Breakdown Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC = 10 mA
IC = 100 µA
IE = 100 µA
VCB =80 V
VEB = 5 V
100
100
5
ON CHARACTERISTICS
hFE DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage
VBE(on) Base-Emitter On Voltage
IC = 50 mA, VCE = 1 V
IC = 250 mA, VCE = 1 V
IC = 500 mA, VCE = 1 V
IC = 250 mA, IB = 10 mA
IC = 250 mA, IB = 25 mA
IC = 250 mA, VCE = 1 V
80
50
20
SMALL SIGNAL CHARACTERISTICS
Ccb Output Capacitance
hfe Small Signal Current Gain
*Pulse Test: Pulse Width 300 µs, Duty Cycle 1.0%
VCB = 10 V, IE = 0, f = 1MHz
IC = 200 mA, VCE = 5 V, f=20MHz
2.5
100
10
250
0.5
0.35
1.2
30
25
V
V
V
nA
uA
-
V
V
pF
-
© 1997 Fairchild Semiconductor
tn6718a.lwp Rev A


Features TN6718A TN6718A CB E TO-226 NPN Gen eral Purpose Amplifier This device is d esigned for general purpose medium powe r amplifiers and switches requiring col lector currents to 1.0A. Sourced from P rocess 39. See TN6717A for characterist ics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Co llector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Value 100 100 5 1.2 - 55 to +150 Units V V V A °C Operatin g and Storage Junction Temperature Rang e *These ratings are limiting values a bove which the serviceability of any se miconductor device may be impaired. NOT ES: 1) These ratings are based on a max imum junction temperature of 150°C. 2) These are steady state limits. The fac tory should be consulted on application s involving pulsed or low duty cycle op erations. Thermal Characteristics Symb ol TA = 25°C unless otherwise noted Max Characteristic TN6718A PD RθJC RθJA Total Device Dissipation De.
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