TN6719A Voltage Amplifier Datasheet

TN6719A Datasheet, PDF, Equivalent


Part Number

TN6719A

Description

NPN High Voltage Amplifier

Manufacture

Fairchild Semiconductor

Total Page 2 Pages
Datasheet
Download TN6719A Datasheet


TN6719A
TN6719A
Discrete POWER & Signal
Technologies
C
BE
TO-226
NPN High Voltage Amplifier
This device is designed for use in high voltage applications .
Sourced from Process 48. See MPSA42 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
300
VCBO
Collector-Base Voltage
300
VEBO
Emitter-Base Voltage
7.0
IC
TJ, Tstg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
200
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
Max
TN6719A
1.0
8.0
125
50
Units
V
V
V
mA
°C
Units
W
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation

TN6719A
NPN High Voltage Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
V(BR)CBO
V(BR)EBO
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
ICBO Collector Cutoff Current
IEBO Emitter Cutoff Current
IC = 1.0 mA, IB = 0
IC = 100 µA, IE = 0
IE = 1.0 mA, IC = 0
VCB = 200 V, IE = 0
VEB = 6.0 V, IC = 0
ON CHARACTERISTICS*
hFE DC Current Gain
VCE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
VCE = 10 V, IC = 1.0 mA
VCE = 10 V, IC = 10 mA
VCE = 10 V, IC = 30 mA
IC = 30 mA, IB = 3.0 mA
VCE = 10 V, IC = 30 mA
SMALL SIGNAL CHARACTERISTICS
Ccb Collector-Base Capacitance
hfe Small-Signal Current Gain
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
VCB = 20 V, f = 1.0 MHz
IC = 15 mA, VCE = 100 V,
f = 20 MHz
300
300
7.0
100
100
V
V
V
nA
nA
25
40
40 200
0.75 V
0.85 V
3.5 pF
1.5 15


Features TN6719A Discrete POWER & Signal Technol ogies TN6719A C TO-226 BE NPN High Voltage Amplifier This device is design ed for use in high voltage applications . Sourced from Process 48. See MPSA42 for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, T stg Collector-Emitter Voltage Collector -Base Voltage Emitter-Base Voltage Coll ector Current - Continuous TA = 25°C unless otherwise noted Parameter Valu e 300 300 7.0 200 -55 to +150 Units V V V mA °C Operating and Storage Junct ion Temperature Range *These ratings a re limiting values above which the serv iceability of any semiconductor device may be impaired. NOTES: 1) These rating s are based on a maximum junction tempe rature of 150 degrees C. 2) These are s teady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. T hermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise note d Characteristic Total Device Dissipation Derate above 25°C Thermal.
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