TN6725A Darlington Transistor Datasheet

TN6725A Datasheet, PDF, Equivalent


Part Number

TN6725A

Description

NPN Darlington Transistor

Manufacture

Fairchild Semiconductor

Total Page 2 Pages
Datasheet
Download TN6725A Datasheet


TN6725A
TN6725A
Discrete Power & Signal
Technologies
CBE
TO-226
NPN Darlington Transistor
This device is designed for applications requiring extremely high current gain at collector currents to 1A. Sourced
from Process 05. See MPSA14 for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCES
Collector-Emitter Voltage
50
VCBO
Collector-Base Voltage
60
VEBO
Emitter-Base Voltage
12
IC Collector Current - Continuous
1.2
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Units
V
V
V
A
°C
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
TN6725A
PD Total Device Dissipation
Derate above 25°C
1
8
RθJC
Thermal Resistance, Junction to Case
50
RθJA
Thermal Resistance, Junction to Ambient
125
Units
W
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
TN6725A, Rev A

TN6725A
NPN Darlington Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
BVCES Collector-Emitter Breakdown Voltage
BVCBO Collector-Base Breakdown Voltage
BVEBO Emitter-Base Breakdown Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC = 1 mA
IC = 100 µA
IE = 10 µA
VCB = 40 V
VEB = 10 V
50 V
60 V
12 V
100 nA
100 nA
ON CHARACTERISTICS*
hFE DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage
VBE(sat)
VBE(on)
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 200 mA, VCE = 5 V
IC = 500 mA, VCE = 5 V
IC = 1A, VCE = 5 V
IC = 200 mA, IB = 2 mA
IC = 1 A, IB = 2 mA
IC = 1 A, IB = 2 mA
IC = 1 A, VCE = 5.0 V
25,000
15,000
4000 40,000
1.0
1.5
2
2
-
V
V
V
SMALL SIGNAL CHARACTERISTICS
Ccb Output Capacitance
hfe Small Signal Current Gain
*Pulse Test: Pulse Width 300 µs, Duty Cycle 1.0%
VCB = 10 V, IE = 0, f = 1MHz
IC = 200 mA,VCE = 5 V, f=100MHz
1
10 pF
10 -
© 1997 Fairchild Semiconductor Corporation
TN6725A, Rev A


Features TN6725A Discrete Power & Signal Technol ogies TN6725A CB E TO-226 NPN Darl ington Transistor This device is design ed for applications requiring extremely high current gain at collector current s to 1A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Ma ximum Ratings* Symbol VCES VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter V oltage Collector-Base Voltage Emitter-B ase Voltage Collector Current - Continu ous TA = 25°C unless otherwise noted Value 50 60 12 1.2 -55 to +150 Units V V V A °C Operating and Storage Junc tion Temperature Range *These ratings are limiting values above which the ser viceability of any semiconductor device may be impaired. NOTES: 1) These ratin gs are based on a maximum junction temp erature of 150°C. 2) These are steady state limits. The factory should be con sulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol TA = 25°C unl ess otherwise noted Max Characteristic TN6725A PD RθJC RθJA Total .
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