Purpose Amplifier. TN6729A Datasheet


TN6729A Amplifier. Datasheet pdf. Equivalent


TN6729A


PNP General Purpose Amplifier
TN6729A / NZT6729

Discrete POWER & Signal Technologies

TN6729A

NZT6729
C

E C C

TO-226
BE

B

SOT-223

PNP General Purpose Amplifier
This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 800 mA. Sourced from Process 79.

Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

TA = 25°C unless otherwise noted

Parameter

Value
80 80 5.0 1.0 -55 to +150

Units
V V V A °C

Operating and Storage Junction Temperature Range

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RθJC RθJA

TA = 25°C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient TN6729A 1.0 8.0 50 125

Max
*NZT6729 1.0 8.0 125

Units
W mW/ °C °C/W °C/W

*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.

© 1997 Fairchild Semiconductor Corporation

TN6729A / NZT6729

PNP General Purpose Amplifi...



TN6729A
Discrete POWER & Signal
Technologies
TN6729A
NZT6729
C
BE
TO-226
C
SOT-223
E
C
B
PNP General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 800 mA.
Sourced from Process 79.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
80
VCBO
Collector-Base Voltage
80
VEBO
Emitter-Base Voltage
5.0
IC
TJ, Tstg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
1.0
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
TN6729A
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
1.0
8.0
50
RθJA Thermal Resistance, Junction to Ambient
125
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
*NZ T6729
1.0
8.0
125
Units
V
V
V
A
°C
Units
W
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation

TN6729A
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
V(BR)CBO
V(BR)EBO
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
ICBO Collector-Cutoff Current
IEBO Emitter-Cutoff Current
IC = 1.0 mA, IB = 0
IC = 100 µA, IE = 0
IE = 1.0 mA, IC = 0
VCB = 60 V, IE = 0
VEB = 5.0 V, IC = 0
80 V
80 V
5.0 V
0.1 µA
10 µA
ON CHARACTERISTICS*
hFE DC Current Gain
VCE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 50 mA, VCE = 1.0 V
IC = 250 mA, VCE = 1.0 V
IC = 500 mA, VCE = 1.0 V
IC = 250 mA, IB = 10 mA
IC = 250 mA, IB = 25 mA
IC = 250 mA, VCE = 1.0 V
80
50 250
20
0.5
0.35
1.2
V
V
V
SMALL SIGNAL CHARACTERISTICS
hfe Small-Signal Current Gain
Ccb Collector-Base Capacitance
IC = 200 mA, VCE = 5.0 V,
f = 20 MHz
2.5 25
VCB = 10 V, IE = 0, f = 1.0 MHz
30 pF
*Pulse Test: Pulse Width 300 µs, Duty Cycle 1.0%
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
200
125 °C
150
VCE = 1.0 V
100
25 °C
50 - 40 °C
0
0.01
0.02 0.05 0.1
0.5
I C - COLLECTOR CURRENT (mA)
P9
1
Collector-Emitter Saturation
Voltage vs Collector Current
2
1 β = 10
25 °C
0.1 - 40 ºC
125 ºC
0.01
10
100
I C - COLLECTOR CURRENT (mA)
P 79
1000




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