TN815-700B SCRs Datasheet

TN815-700B Datasheet, PDF, Equivalent


Part Number

TN815-700B

Description

SCRs

Manufacture

STMicroelectronics

Total Page 5 Pages
Datasheet
Download TN815-700B Datasheet


TN815-700B
®
FEATURES
ITRMS = 8 A
VDRM = 400 V to 800 V
IGT 5 mA and 15 mA
DESCRIPTION
The TN805/TN815-B serie of Silicon Controlled
Rectifiers uses a high performance TOPGLASS
PNPN technology.
These parts are intended for general purpose
applications using mount technology.
TN805/TN815-B
SCR’s
A
AG
K
DPAK
ABSOLUTE MAXIMUM RATINGS
Symbol
IT(RMS)
IT(AV)
ITSM
I2t
dI/dt
Tstg
Tj
Tl
Parameter
RMS on-state current
(180° conduction angle)
Tc= 105°C
Mean on-state current
(180° conduction angle)
Tc= 105°C
Non repetitive surge peak on-state current tp = 8.3 ms
(Tj initial = 25°C)
I2t Value for fusing
tp = 10 ms
tp = 10ms
Critical rate of rise of on-state current
IG = 100 mA dIG /dt = 1 A/µs.
Storage junction temperature range
Operating junction temperature range
Maximum lead temperature for soldering during 10s
Value
8
5
73
70
24.5
100
- 40 to + 150
- 40 to + 125
260
Unit
A
A
A
A2s
A/µs
°C
°C
Symbol
Parameter
VDRM Repetitive peak-off voltage
VRRM Tj = 125°C
August 1998 - Ed: 1A
400B
400
TN805 or TN815
600B 700B
600 700
800B
800
Unit
V
1/5

TN815-700B
TN805/TN815-B
THERMAL RESISTANCES
Symbol
Rth(j-a)
Rth(j-c)
Parameter
Junction to ambient (S=0.5cm2)
Junction to case for D.C
Value
70
2.5
GATE CHARACTERISTICS
PG (AV)= 1W PGM = 10 W (tp = 20 µs)
IGM = 4 A (tp = 20 µs)
VRGM = 5 V
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
IGT
VGT
VGD
tgt
IH
IL
VTM
IDRM
IRRM
dV/dt
VD = 12V (DC) RL= 33
VD = 12V (DC) RL= 33
VD = VDRM RL = 3.3k
VD = VDRM
IG = 40mA
ITM = 3 x IT(AV)
dIG/dt = 0.5A/us
IT= 150mA Gate open
IG = 1.2 IGT
ITM= 16A tp= 380µs
VDRM Rated
VRRM Rated
Linear slope up to
VD=67%VDRM Gate open
Type
Tj= 25°C MAX
Tj= 25°C MAX
Tj= 125°C MIN
Tj= 25°C TYP
Value
TN805 TN815
5 15
1.5
0.2
2
Unit
µA
V
V
µs
Tj= 25°C MAX
Tj= 25°C MAX
Tj= 25°C MAX
Tj= 25°C MAX
Tj = 125°C MAX
Tj= 125°C MIN
25 30
25 30
1.6
10
2
50 150
mA
mA
V
µA
mA
V/µs
ORDERING INFORMATION
TN
SCR
CURRENT
8 05 - 600
SENSITIVITY
2/5
B
PACKAGES :
B: DPAK
VDRM / VRRM


Features ® TN805/TN815-B SCR’s FEATURES ITRM S = 8 A VDRM = 400 V to 800 V IGT ≤ 5 mA and 15 mA DESCRIPTION The TN805/TN8 15-B serie of Silicon Controlled Rectif iers uses a high performance TOPGLASS P NPN technology. These parts are intende d for general purpose applications usin g mount technology. K A A G DPAK AB SOLUTE MAXIMUM RATINGS Symbol IT(RMS) I T(AV) ITSM Parameter RMS on-state curre nt (180° conduction angle) Mean on-sta te current (180° conduction angle) Non repetitive surge peak on-state current (Tj initial = 25°C) Tc= 105°C Tc= 10 5°C tp = 8.3 ms tp = 10 ms I2t dI/dt T stg Tj Tl I2t Value for fusing Critical rate of rise of on-state current dIG / dt = 1 A/µs. IG = 100 mA Storage junct ion temperature range Operating junctio n temperature range Maximum lead temper ature for soldering during 10s tp = 10m s Value 8 5 73 70 24.5 100 - 40 to + 15 0 - 40 to + 125 260 A2s A/µs °C °C U nit A A A Symbol VDRM VRRM Parameter 400B Repetitive peak-off voltage Tj = 125°C 400 TN805 or TN815 600B 600 700B.
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