TODV1040 ALTERNISTORS Datasheet

TODV1040 Datasheet, PDF, Equivalent


Part Number

TODV1040

Description

ALTERNISTORS

Manufacture

STMicroelectronics

Total Page 5 Pages
Datasheet
Download TODV1040 Datasheet


TODV1040
TODV 640 ---> 1240
ALTERNISTORS
FEATURES
. HIGH COMMUTATION : > 142 A/ms (400Hz)
. INSULATING VOLTAGE = 2500V(RMS)
(UL RECOGNIZED : EB1734)
. HIGH VOLTAGE CAPABILITY : VDRM = 1200 V
A2
G
A1
DESCRIPTION
The TODV 640 ---> 1240 use a high performance
passivated glass alternistor technology. Featuring
very high commutation levels and high surge cur-
rent capability, this family is well adapted to power
control on inductive load (motor, transformer...)
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RMS)
RMS on-state current
(360° conduction angle)
Parameter
Tc = 75 °C
ITSM
I2t
dI/dt
Tstg
Tj
Tl
Non repetitive surge peak on-state current
( Tj initial = 25°C )
tp = 2.5 ms
tp = 8.3 ms
I2t value
tp = 10 ms
tp = 10 ms
Critical rate of rise of on-state current
Gate supply : IG = 500mA diG/dt = 1A/µs
Repetitive
F = 50 Hz
Non
Repetitive
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
RD91
(Plastic)
Value
40
590
370
350
610
20
100
- 40 to + 150
- 40 to + 125
260
Unit
A
A
A2s
A/µs
°C
°C
°C
Symbol
Parameter
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125 °C
March 1995
TODV
Unit
640
840
1040
1240
600
800
1000
1200
V
1/5

TODV1040
TODV 640 ---> 1240
THERMAL RESISTANCES
Symbol
Parameter
Rth (c-h) Contact (case-heatsink) with grease
Rth (j-c) DC Junction to case for DC
Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz)
Value
0.1
1.2
0.9
Unit
°C/W
°C/W
°C/W
GATE CHARACTERISTICS (maximum values)
PG (AV) = 1W PGM = 40W (tp = 20 µs) IGM = 8A (tp = 20 µs) VGM = 16V (tp = 20 µs).
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Quadrant
IGT
VGT
VGD
tgt
IL
VD=12V (DC) RL=33
VD=12V (DC) RL=33
VD=VDRM RL=3.3k
VD=VDRM IG = 500mA
dIG/dt = 3A/µs
IG=1.2 IGT
IH *
VTM *
IDRM
IRRM
IT= 500mA gate open
ITM= 60A tp= 380µs
VDRM Rated
VRRM Rated
dV/dt * Linear slope up to VD=67%VDRM
gate open
Tj=25°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=125°C
Tj=125°C
I-II-III
I-II-III
I-II-III
I-II-III
I-III
II
MAX
MAX
MIN
TYP
TYP
TYP
MAX
MAX
MAX
MIN
(dI/dt)c *
(dV/dt)c = 200V/µs
(dV/dt)c = 10V/µs
Tj=125°C
* For either polarity of electrode A2 voltage with reference to electrode A1.
MIN
Value
200
1.5
0.2
2.5
100
200
50
1.8
0.02
8
500
35
142
Unit
mA
V
V
µs
mA
mA
V
mA
V/µs
A/ms
2/5


Features TODV 640 ---> 1240 ALTERNISTORS . . . FEATURES HIGH COMMUTATION : > 142 A/ms (400Hz) INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : EB1734) HIGH VOLTAGE CAPABILITY : VDRM = 1200 V A2 G A1 DE SCRIPTION The TODV 640 ---> 1240 use a high performance passivated glass alter nistor technology. Featuring very high commutation levels and high surge curre nt capability, this family is well adap ted to power control on inductive load (motor, transformer...) ABSOLUTE RATING S (limiting values) Symbol IT(RMS) RMS on-state current (360° conduction angl e) Non repetitive surge peak on-state c urrent ( Tj initial = 25°C ) Parameter Tc = 75 °C Value 40 Unit A RD91 (Pla stic) ITSM tp = 2.5 ms tp = 8.3 ms tp = 10 ms 590 370 350 610 20 100 - 40 t o + 150 - 40 to + 125 260 A I2t dI/dt I2t value Critical rate of rise of on -state current Gate supply : IG = 500mA diG/dt = 1A/µs tp = 10 ms Repetitive F = 50 Hz Non Repetitive A2s A/µs T stg Tj Tl Storage and operating junction temperature range Maximum .
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