TODV825 ALTERNISTORS Datasheet

TODV825 Datasheet, PDF, Equivalent


Part Number

TODV825

Description

ALTERNISTORS

Manufacture

STMicroelectronics

Total Page 5 Pages
Datasheet
Download TODV825 Datasheet


TODV825
TODV 625 ---> 1225
ALTERNISTORS
FEATURES
. HIGH COMMUTATION : > 88 A/ms (400Hz)
. INSULATING VOLTAGE = 2500V(RMS)
(UL RECOGNIZED : EB1734)
. HIGH VOLTAGE CAPABILITY : VDRM = 1200 V
A2
G
A1
DESCRIPTION
The TODV 625 ---> 1225 use high performance
passivated glass alternistor technology. Featuring
very high commutation levels and high surge cur-
rent capability, this family is well adapted to power
control on inductive load (motor, transformer...)
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RMS)
Parameter
RMS on-state current
(360° conduction angle)
Tc = 80 °C
ITSM
I2t
dI/dt
Tstg
Tj
Tl
Non repetitive surge peak on-state current
( Tj initial = 25°C )
tp = 2.5 ms
tp = 8.3 ms
I2t value
tp = 10 ms
tp = 10 ms
Critical rate of rise of on-state current
Gate supply : IG = 500mA diG/dt = 1A/µs
Repetitive
F = 50 Hz
Non
Repetitive
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
RD91
(Plastic)
Value
25
390
250
230
265
20
100
- 40 to + 150
- 40 to + 125
260
Unit
A
A
A2s
A/µs
°C
°C
°C
Symbol
Parameter
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125 °C
March 1995
TODV
Unit
625
825
1025
1225
600
800
1000
1200
V
1/5

TODV825
TODV 625 ---> 1225
THERMAL RESISTANCES
Symbol
Parameter
Rth (c-h) Contact (case-heatsink) with grease
Rth (j-c) DC Junction to case for DC
Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz)
Value
0.1
1.6
1.2
Unit
°C/W
°C/W
°C/W
GATE CHARACTERISTICS (maximum values)
PG (AV) = 1W PGM = 40W (tp = 20 µs) IGM = 8A (tp = 20 µs) VGM = 16V (tp = 20 µs).
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Quadrant
IGT
VGT
VGD
tgt
IL
VD=12V (DC) RL=33
VD=12V (DC) RL=33
VD=VDRM RL=3.3k
VD=VDRM IG = 500mA
dIG/dt = 3A/µs
IG=1.2 IGT
IH *
VTM *
IDRM
IRRM
IT= 500mA gate open
ITM= 35A tp= 380µs
VDRM Rated
VRRM Rated
dV/dt *
Linear slope up to VD=67%VDRM
gate open
Tj=25°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=125°C
Tj=125°C
I-II-III
I-II-III
I-II-III
I-II-III
I-III
II
MAX
MAX
MIN
TYP
TYP
TYP
MAX
MAX
MAX
MIN
(dI/dt)c *
(dV/dt)c = 200V/µs
(dV/dt)c = 10V/µs
Tj=125°C
* For either polarity of electrode A2 voltage with reference to electrode A1.
MIN
Value
150
1.5
0.2
2.5
100
200
50
1.8
0.02
8
500
20
88
Unit
mA
V
V
µs
mA
mA
V
mA
V/µs
A/ms
2/5


Features TODV 625 ---> 1225 ALTERNISTORS . . . FEATURES HIGH COMMUTATION : > 88 A/ms ( 400Hz) INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : EB1734) HIGH VOLTAGE C APABILITY : VDRM = 1200 V A2 G A1 DES CRIPTION The TODV 625 ---> 1225 use hig h performance passivated glass alternis tor technology. Featuring very high com mutation levels and high surge current capability, this family is well adapted to power control on inductive load (mo tor, transformer...) ABSOLUTE RATINGS ( limiting values) Symbol IT(RMS) RMS on- state current (360° conduction angle) Non repetitive surge peak on-state curr ent ( Tj initial = 25°C ) Parameter Tc = 80 °C Value 25 Unit A RD91 (Plasti c) ITSM tp = 2.5 ms tp = 8.3 ms tp = 10 ms 390 250 230 265 20 100 - 40 to + 150 - 40 to + 125 260 A I2t dI/dt I 2t value Critical rate of rise of on-st ate current Gate supply : IG = 500mA di G/dt = 1A/µs tp = 10 ms Repetitive F = 50 Hz Non Repetitive A2s A/µs Tstg Tj Tl Storage and operating junction temperature range Maximum lea.
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