N-Channel 20-V (D-S) MOSFETs
TN0200T/TS
Vishay Siliconix
N-Channel 20-V (D-S) MOSFETs
PRODUCT SUMMARY
ID (A) VDS (V)
20
rDS(on) (W)
0.4 @ VGS = 4.5...
Description
TN0200T/TS
Vishay Siliconix
N-Channel 20-V (D-S) MOSFETs
PRODUCT SUMMARY
ID (A) VDS (V)
20
rDS(on) (W)
0.4 @ VGS = 4.5 V 0.5 @ VGS = 2.5 V
TN0200T
0.73 0.65
TN0200TS
1.2 1.1
FEATURES
D D D D D Low On-Resistance: 0.29 W Low Threshold: 0.9 V (typ) 2.5-V or Lower Operation Fast Switching Speed: 22 ns Low Input and Output Leakage
BENEFITS
D D D D D Low Offset Voltage Low-Voltage Operation High-Speed Circuits Low Error Voltage Low Battery Voltage Operation
APPLICATIONS
D D D D D Direct Logic-Level Interfact: TTL/CMOS Dirvers: Relays, Solenoids, Lamps, Hammers Battery Operated Systems, DC/DC Converters Solid-State Relays Load/Power Switching−Cell Phones, Pagers
TO-236 (SOT-23)
Top View G 1 3 S 2 D Marking Code: TN0200T: NOwll TN0200TS: NSwll w = Week Code ll = Lot Traceability
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C TA= 25_C TA= 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
TN0200T
20 "8 0.73 0.58 4 0.6 0.35 0.22
TN0200TSc
20 "8 1.2 1.0 4 1.0 1.0 0.65
Unit
V
A
W _C
−55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 10 sec. c. Copper lead frame. Document Number: 70202 S-40277—Rev. F, 23-F...
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