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TN25

STMicroelectronics

25A SCRs

® TN25 and TYNx25 Series 25A SCRs STANDARD MAIN FEATURES: Symbol IT(RMS) VDRM/VRRM IGT Value 25 600 to 1000 40 Unit G...


STMicroelectronics

TN25

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Description
® TN25 and TYNx25 Series 25A SCRs STANDARD MAIN FEATURES: Symbol IT(RMS) VDRM/VRRM IGT Value 25 600 to 1000 40 Unit G A A K V A A mA K A G K A DESCRIPTION The TYN / TN25 SCR Series is suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities. D2PAK (TN25-G) G TO-220AB (TYN) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) T(AV) ITSM Parameter RMS on-state current (180° conduction angle) Average on-state current (180° conduction angle) Non repetitive surge peak on-state current I²t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range Maximum peak reverse gate voltage tp = 8.3 ms Tj = 25°C tp = 10 ms tp = 10 ms F = 60 Hz tp = 20 µs Tj = 25°C Tj = 125°C Tj = 125°C Tj = 125°C 300 450 50 4 1 - 40 to + 150 - 40 to + 125 5 A2S A/µs A W °C V Tc = 100°C Tc = 100°C Value 25 16 314 A Unit A A I ²t dI/dt IGM PG(AV) Tstg Tj VRGM April 2002 - Ed: 4A 1/7 TN25 and TYNx25 Series ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol IGT VD = 12 V VGT VGD IH IL dV/dt VTM Vt0 Rd IDRM IRRM VD = VDRM IT = 500 mA IG = 1.2 IGT VD = 67 % VDRM ITM = 50 A Gate open Tj = 125°C Tj = 25°C Tj = 125°C Tj = 125°C Tj = 25°C Tj = 125°C RL = 3.3 kΩ Gate open Tj = 125°C RL = 33 Ω Test Conditions MIN. MAX. MAX. MIN. MAX. MAX. MIN. MAX. MAX. M...




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