TN3725A / MMPQ3725
Discrete POWER & Signal Technologies
TN3725A
MMPQ3725
E B E B E B
E
B
C
TO-226
BE
SOIC-16
C
...
TN3725A / MMPQ3725
Discrete POWER & Signal Technologies
TN3725A
MMPQ3725
E B E B E B
E
B
C
TO-226
BE
SOIC-16
C
C
C
C
C
C
C
C
NPN Switching
Transistor
This device is designed for high speed core driver applications up to collector currents of 1.0 A. Sourced from Process 25.
Absolute Maximum Ratings
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
40 60 6.0 1.2 -55 to +150
Units
V V V A °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RθJC RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25° C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Effective 4 Die Each Die TN3725A 1.0 8.0 50 125
Max
MMPQ3725 1.0 8.0
Units
W mW/ °C °C/W °C/W °C/W °C/W
125 240
© 1997 Fairchild Semiconductor Corporation
TN3725A / MMPQ3725
NPN Switching
Transistor
(continued)
Electrical Characteristics
Symbol Parameter
TA= 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO ...
