TODV1240

TODV 640 ---> 1240 ALTERNISTORS . . . FEATURES HIGH COMMUTATION : > 142 A/ms (400Hz) INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : EB1734) HIGH VOLTAGE CAPABILITY : VDRM = 1200 V A2 G A1 DESCRIPTION The TODV 640 ---> 1240 use a high performance passivated glass alternistor technology. Featuring very high commutation levels and high surge current capability, this family is well adapted to power control on inductive load (motor, transformer...) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25°C ) Parameter Tc = 75 °C Value 40 Unit A RD91 (Plastic) ITSM tp = 2.5 ms tp = 8.3 ms tp = 10 ms 590 370 350 610 20 100 - 40 to + 150 - 40 to + 125 260 A I2t dI/dt I2t value Critical rate of rise of on-state current Gate supply : IG = 500mA diG/dt = 1A/µs tp = 10 ms Repetitive F = 50 Hz Non Repetitive A2s A/µs Tstg Tj Tl Storage and operating junction temperature range Maximum lead temperature for soldering during 10 s at 4.5 mm from case °C °C °C Symbol Parameter 640 840 800 TODV 1040 1000 1240 1200 Unit VDRM VRRM Repetitive peak off-state voltage Tj = 125 °C 600 V March 1995 1/5 TODV 640 ---> 1240 THERMAL RESISTANCES Symbol Rth (c-h) Parameter Contact (case-heatsink) with grease Value 0.1 1.2 0.9 Unit °C/W °C/W °C/W Rth (j-c) DC Junction to case for DC Rth (j-c) AC Junction to case for 360 ° conduction angle ( F= 50 Hz) GATE CHARACTERISTICS (maximum va...