TP0610T

Supertex inc. TP0610T P-Channel Enhancement Mode Vertical DMOS FETs Features ►► High input impedance and high gain ►► Low power drive requirement ►► Ease of paralleling ►► Low CISS and fast switching speeds ►► Excellent thermal stability ►► Integral source-drain diode ►► Free from secondary breakdown Applications ►► Logic level interfaces - ideal for TTL and CMOS ►► Solid state relays ►► Battery operated systems ►► Photo voltaic systems ►► Analog switches ►► Power management ►► Telecom switches General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermallyinduced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Ordering Information Device Package Options TO-236AB (SOT-23) TP0610T TP0610T-G For packaged products, -G indicates package is RoHS compliant (‘Green’). Consult factory for die / wafer form part numbers. Refer to Die Specification VF21 for layout and...