TN805-800B

® TN805/TN815-B SCR’s FEATURES ITRMS = 8 A VDRM = 400 V to 800 V IGT ≤ 5 mA and 15 mA DESCRIPTION The TN805/TN815-B serie of Silicon Controlled Rectifiers uses a high performance TOPGLASS PNPN technology. These parts are intended for general purpose applications using mount technology. K A A G DPAK ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) IT(AV) ITSM Parameter RMS on-state current (180° conduction angle) Mean on-state current (180° conduction angle) Non repetitive surge peak on-state current (Tj initial = 25°C) Tc= 105°C Tc= 105°C tp = 8.3 ms tp = 10 ms I2t dI/dt Tstg Tj Tl I2t Value for fusing Critical rate of rise of on-state current dIG /dt = 1 A/µs. IG = 100 mA Storage junction temperature range Operating junction temperature range Maximum lead temperature for soldering during 10s tp = 10ms Value 8 5 73 70 24.5 100 - 40 to + 150 - 40 to + 125 260 A2s A/µs °C °C Unit A A A Symbol VDRM VRRM Parameter 400B Repetitive peak-off voltage Tj = 125°C 400 TN805 or TN815 600B 600 700B 700 800B 800 Unit V August 1998 - Ed: 1A 1/5 TN805/TN815-B THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Parameter Junction to ambient (S=0.5cm2) Junction to case for D.C Value 70 2.5 Unit °C/W °C/W GATE CHARACTERISTICS PG (AV)= 1W PGM = 10 W (tp = 20 µs) IGM = 4 A (tp = 20 µs) VRGM = 5 V ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD tgt IH IL VTM IDRM IRRM dV/dt Test Conditions VD = 12V (DC) RL= 33Ω VD = 12V (DC) RL= 33Ω VD = VDRM RL = 3.3kΩ VD = VDRM IG = 40mA IT= 150mA IG = 1.2 IGT ITM=...