TP62601

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by TP62601/D Microwave Power Oscillator Transistor . . . designed for use as power oscillators at frequencies to 3.0 GHz with typical output power of over 1.0 watt. Operation to 3.0 GHz High Output Power (1.2 W Typ @ 2.5 GHz) Rugged — Capable of Withstanding High Load VSWR High Reliability Hermetic Package Gold Metallization Diffused Emitter Ballast Resistors Common Collector Configuration Formerly named TRW62601 Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. TP62601 MICROWAVE POWER OSCILLATOR TRANSISTOR CASE 328A–03, STYLE 3 (GP–13) MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Operating Junction Temperature Storage Temperature Range Symbol VCEO VCBO VEBO IC TJ Tstg Value 22 45 3.5 0.5 200 – 65 to + 200 Unit Vdc Vdc Vdc Adc °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Symbol Min Typ Max 15 Unit °C/W ELECTRICAL CHARACTERISTICS Characteristic Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 20 mA, IB = 0) Collector–Base Breakdown Voltage (IC = 1.0 mA, IE = 0) Emitter–Base Breakdown Voltage (IE = 0.25 mA, IC = 0) Collector–Emitter Breakdown Voltage (IC = 20 mA, RBE = 10 Ω) Collector Cutoff Current (VCB = 28 V, IE = 0) V(BR)CEO V(BR)CBO V(BR)EBO V(BR)CER ICBO 22 45 3.5 50 — — — — — ...