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TPC8005-H Dataheets PDF



Part Number TPC8005-H
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description N-Channel MOSFET
Datasheet TPC8005-H DatasheetTPC8005-H Datasheet (PDF)

TPC8005-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High Speed U−MOS) TPC8005−H High Speed and High Efficiency DC−DC Converters Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package High speed switching : 60% speed up (compare with current type) Small gate charge : Qg = 20 nC (typ.) : RDS (ON) = 13 mΩ (typ.) Low drain−source ON resistance Unit: mm High forward transfer admittance : |Yfs| = 16 S .

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TPC8005-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High Speed U−MOS) TPC8005−H High Speed and High Efficiency DC−DC Converters Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package High speed switching : 60% speed up (compare with current type) Small gate charge : Qg = 20 nC (typ.) : RDS (ON) = 13 mΩ (typ.) Low drain−source ON resistance Unit: mm High forward transfer admittance : |Yfs| = 16 S (typ.) Low leakage current : IDSS = 10 µA (max) (VDS = 30 V) Enhancement−mode : Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating 30 30 ±20 11 44 2.4 1.0 157 11 0.24 150 −55 to 150 Unit V V V A W W JEDEC JEITA TOSHIBA ― ― 2-6J1B Drain power dissipation Drain power dissipation Weight: 0.080 g (typ.) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range Circuit Configuration mJ A mJ °C °C Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-02-06 TPC8005-H Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Rth (ch-a) Rth (ch-a) Max 52.1 125 Unit °C/W °C/W Marking (Note 5) TPC8005 H ※ Type Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (unit: mm) FR-4 25.4 × 25.4 × 0.8 (unit: mm) (a) (b) Note 3: VDD = 24 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = 11 A Note 4: Reptitve rating; pulse width limited by maximum channel temperature Note 5: ● on lower left of the marking indicates Pin 1. ※ shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of manufacture: January to December are denoted by letters A to L respectively.) 2 2002-02-06 TPC8005-H Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn−on time Switching time Fall time tf toff Qg Qgs Qgd VDD ≈ 24 V, VGS = 10 V, ID = 11 A — 8 — Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) RDS (ON) |Yfs| Ciss Crss Coss tr ton VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = −20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V, ID = 5.5 A VGS = 10 V, ID = 5.5 A VDS = 10 V, ID = 5.5 A Min — — 30 15 1.3 — — 8 — — — — — Typ. — — — — — 23 13 16 1150 140 400 4 12 Max ±10 10 — — 2.5 27 16 — — — — — — ns pF Unit µA µA V V V mΩ mΩ S Turn−off time Total gate charge (Gate−source plus gate−drain) Gate−source charge Gate−drain (“miller”) charge — — — — 40 20 15 5 — — — — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Pulse (Note 1) Symbol IDRP VDSF Test Condition — IDR = 11 A, VGS = 0 V Min — — Typ. — — Max 44 −1.2 Unit A V Forward voltage (diode) 3 2002-02-06 TPC8005-H 4 2002-02-06 TPC8005-H 5 2002-02-06 TPC8005-H 6 2002-02-06 TPC8005-H RESTRICTIONS ON PRODUCT USE 000707EAA • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a .


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