TPC8102

TPC8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π−MOSVI) TPC8102 Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications Small footprint due to small and thin package Low drain−source ON resistance : RDS (ON) = 34 mΩ (typ.) High forward transfer admittance : |Yfs| = 9 S (typ.) Low leakage current : IDSS = −10 µA (max) (VDS = −30 V) Enhancement−mode : Vth = −0.8~ −2.0 V (VDS = −10 V, ID = −1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating −30 −30 ±20 −6 −24 2.4 1.0 47 −6 0.24 150 −55 to 150 Unit V V V A W W mJ A mJ °C °C JEDEC JEITA TOSHIBA ― ― 2-6J1B Drain power dissipation Drain power dissipation Weight: 0.080 g (typ.) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range Circuit Configuration Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-01-18 TPC8102 Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Rth (ch-a) Rth (ch-a) Max 52.1 125 Unit °C/W °C/W Marking (Not...