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TPC8106-H Dataheets PDF



Part Number TPC8106-H
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description P-Channel MOSFET
Datasheet TPC8106-H DatasheetTPC8106-H Datasheet (PDF)

TPC8106-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII) TPC8106−H High Speed and High Efficiency DC−DC Converters Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge Low drain−source ON resistance : Qg = 52 nC (typ.) : RDS (ON) = 14 mΩ (typ.) Unit: mm High forward transfer admittance : |Yfs| = 16.6 S (typ.) Low leakage current : IDSS = −10.

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