TPC8202

TPC8202 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI) TPC8202 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs l 2.5-V Gate drive l Small footprint due to small and thin package l Low drain−source ON resistance l Low leakage current l Enhancement−mode : RDS (ON) = 41 mΩ (typ.) l High forward transfer admittance : |Yfs| = 9 S (typ.) : IDSS = 10 µA (max) (VDS = 20 V) : Vth = 0.5~1.1 V (VDS = 10 V, ID = 200 µA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20kΩ) Gate-source voltage Drain curren DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) Rating 20 20 ±12 5 20 1.5 W PD(2) 1.1 Unit V V V A JEDEC JEITA TOSHIBA ― ― 2-6J1E Drain power dissipation (t = 10s) Single-device value (Note 2a) at dual operation (Note 3b) Single-device operation Drain power (Note 3a) dissipation (t = 10s) Single-device value (Note 2b) at dual operation (Note 3b) Single pulse avalanche energy (Note 4) Avalanche current (Note 1) Single-device operation (Note 3a) Weight: 0.080 g (typ.) Circuit Configuration PD (1) 0.75 W PD (2) EAS IAR EAR Tch Tstg 0.45 32.5 5 0.1 150 −55~150 mJ A mJ °C °C Repetitive avalanche energy Single-device value at operation (Note 2a, Note 3b, Note 5) Channel temperature Storage temperature range Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4) and (Note 5) please refer to the next page. This transistor is an electrostatic se...