TPC8208
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
TPC8208
Lithium Ion Battery Applications ...
TPC8208
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (U-MOSIII)
TPC8208
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
Unit: mm
· Small footprint due to small and thin package · Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) · High forward transfer admittance: |Yfs| = 6.3 S (typ.) · Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) · Enhancement-mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 µA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kW) Gate-source voltage
Drain current
DC Pulse
(Note 1) (Note 1)
Drain power dissipation (t = 10 s)
(Note 2a)
Single-device operation (Note 3a)
Single-device value at dual operation
(Note 3b)
Drain power dissipation (t = 10 s)
(Note 2b)
Single-device operation (Note 3a)
Single-device value at dual operation
(Note 3b)
Single pulse avalanche energy (Note 4)
Avalanche current
Repetitive av...
