TPC8402

TPC8402 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (π−MOSVI/U−MOSII) TPC8402 Lithium Ion Secondary Battery Applications Notebook PCs Portable Equipment Applications Low drain−source ON resistance : P Channel RDS (ON) = 27 mΩ (typ.) N Channel RDS (ON) = 37 mΩ (typ.) High forward transfer admittance : P Channel |Yfs| = 7 S (typ.) N Channel |Yfs| = 6 S (typ.) Low leakage current : P Channel IDSS = −10 µA (VDS = −30 V) N Channel IDSS = 10 µA (VDS = 30 V) Enhancement−mode : P Channel Vth = −0.8~ −2.0 V (VDS = −10 V, ID = −1mA) N Channel Vth = 0.8~2.0 V (VDS = 10 V, ID = 1mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg Rating P Channel N Channel −30 −30 ±20 −4.5 −18 1.5 1.0 0.75 0.45 26.3 (Note 4a) −4.5 0.10 150 −55~150 30 30 ±20 5 20 1.5 1.0 W 0.75 0.45 32.5 (Note 4b) 5 mJ A mJ °C °C Unit V V V A JEDEC JEITA TOSHIBA ― ― 2-6J1E Weight: 0.080 g (typ.) Drain power Single-device operation (Note 3a) dissipation (t = 10s) Single-device value at (Note 2a) dual operation (Note 3b) Drain power Single-device operation (Note 3a) dissipation (t = 10s) Single-device value at (Note 2b) dual operation (Note 3b) Single pulse avalanche energy Avalanche current Repetitive avalanche energy Single-device value at operation (Note 2a, Note 3b, Note 5) Channel temperature Storage ...