TPD1030F

TPD1030F Preliminary Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD1030F 2-IN-1 Low-Side Switch for Motor, Solenoid and Lamp Drive TPD1030F is a 2-IN-1 low-side switch. The IC has a vertical MOSFET output which can be directly driven from a CMOS or TTL logic circuit (e.g., an MPU). The IC offers intelligent self-protection function. Features Built-in two power IC chips with a new structure combining a control block and a vertical power MOSFET (L2-π-MOS) on each chip. Can directly drive a power load from a CMOS or TTL logic. Built-in protection circuits against overvoltage (active clamp), overtemperature (thermal shutdown), and overcurrent (current limiter). Low Drain-Source ON-resistance: RDS (ON) = 0.6 Ω (max) (@VIN = 5 V, ID = 0.5 A, Tch = 25°C) Low Leakage Current: IDSS = 10 µA (max) (@VIN = 0 V, VDS = 30 V, Tch = 25°C) Low Input Current: IIN = 300 µA (max) (@VIN = 5 V, Tch = 25°C) 8-pin SOP package with embossed-tape packing. Weight: 0.08 g (typ.) Pin Assignment (top view) SOURCE1 1 8 DRAIN1 IN1 2 7 DRAIN1 SOURCE2 3 6 DRAIN2 IN2 4 5 DRAIN2 Note1: That because of its MOS structure, this product is sensitive to static electricity. 980910EBA1 TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibilit...