TPDV1025

Features ■ On-state current (IT(RMS)): 25 A ■ Max. blocking voltage (VDRM/VRRM): 1200 V ■ Gate current (IGT): 150 mA ■ Commutation @ 10 V/µs: up to 88 A/ms ■ Noise immunity: 2 kV/µs ■ Insulated package: – 2,500 V rms (UL recognized: E81734). Description The TPDVxx25 series use high performance alternistor technology. Featuring very high commutation levels and high surge current capability, these devices are well adapted to power control for inductive and resistive loads (motor, transformer...) especially on three-phase power grid. Targeted three-phase applications include heating systems, motor starters, and induction motor speed control (especially for fans). Table 1. Device summary Parameter TPDV825RG Blocking voltage VDRM/VRRM On-state current IT(RMS) Gate current IGT 800 V TPDVxx25 25 A high voltage Triacs A2 G A1 A1 A2 G TOP3 insulated TPDV1025RG 1000 V 25 A 150 mA TPDV1225RG 1200 V January 2012 Doc ID 18268 Rev 2 1/7 www.st.com 7 Characteristics 1 Characteristics TPDVxx25 Table 2. Absolute maximum ratings (limiting values) Symbol Parameter IT(RMS) ITSM I2t dI/dt VDRM VRRM On-state rms current (180° conduction angle) Non repetitive surge peak on-state current I2t value for fusing Critical rate of rise of on-state current IG = 500 mA, dIG/dt = 1 A/µs tp = 2.5 ms tp = 8.3 ms tp = 10 ms tp = 10 ms F = 50 Hz TPDV825 Repetitive peak off-state voltage TPDV1025 TPDV1225 Tstg Tj VINS(RMS)(1) Storage junction temperature range Operating junction temp...